3results about How to "Increase radiation dose" patented technology

This invention relates to a bifacial photovoltaic (PV) power generation module and a PV power generation system. The bifacial PV power generation module includes a mounting frame, photovoltaic cells, a first reflective mirror, and a second reflective mirror. A first mounting plate and a second mounting plate are connected to form a V-shape. n rows of first photovoltaic cells are mounted on the first mounting plate to form a first photovoltaic cell group, and n-1 rows of second photovoltaic cells are mounted on the second mounting plate to form a second photovoltaic cell group. n-1 rows of first reflective mirrors are mounted on the first mounting plate, and n rows of second reflective mirrors are mounted on the second mounting plate. The first reflective mirrors face the second cell group, and the second reflective mirrors face the first cell group. This invention's bifacial PV power generation module increases the amount of sunlight received by the photovoltaic cells, fully utilizing the power generation characteristics of both reflected and direct sunlight from the bifacial cells. It can generate electricity throughout the sunshine period, thus achieving higher power output and allowing users to obtain a higher return on investment.

The present invention discloses a semiconductor radiation detector for total dose effect loss, and relates to the field of radiation detection technology. The semiconductor radiation detector includes: a semiconductor field effect tube, and a capacitor module arranged at the top rear end of the semiconductor field effect tube; the capacitor module is configured to drift the voltage across the capacitor module after pre-charging as the total dose effect continues to accumulate, and the gate voltage applied to the semiconductor field effect tube drifts based on the drift of the voltage across the capacitor module, and the drain current change of the semiconductor field effect tube is determined; the semiconductor field effect tube is configured to determine the radiation dose change based on the drain current change, so that the semiconductor field effect tube can increase the radiation dose through the capacitor module while ensuring a thick gate oxide layer, so that the semiconductor radiation detector can be integrated into the complementary metal oxide semiconductor manufacturing process, and the cost of integrating the semiconductor radiation detector on the chip is reduced.

The present application relates to a spallation neutron source target body capable of carrying out irradiation experiments, wherein a sample target piece (3) is arranged side by side in a heavy metal target piece (2), a hole (31) is opened in the sample target piece (3), a sample container (4) is placed in the hole (31), and the sample to be subjected to the irradiation experiment is placed in the sample cavity of the sample container (4). The spallation neutron source target body not only has the function of generating neutrons, but also irradiates the sample with the large amount of neutrons generated. After irradiation to a set dose, the sample container (4) can be directly taken out to take out the sample for analysis, which will not affect the normal operation and life of the target body. The sample target piece (3) and the heavy metal target piece (2) are arranged side by side, and the neutron flux is high. The irradiation dose received by the sample to be irradiated is much higher than the dose of the sample irradiated by the neutron on-line neutron source spectrometer. The target body can be used to study the irradiation effect of materials.