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Semiconductor device and manufacturing method thereof

ActiveUS20100109114A1No improvement is obtainedNumber of manufacturing step of manufacturing is increasedSemiconductor/solid-state device detailsSolid-state devicesEngineeringSoi substrate
A semiconductor device manufacturing method includes etching a silicon on insulator (SOI) from its surface (i.e., semiconductor substrate layer) to form a first trench and a second trench. The first trench extends through the SOI substrate and reaches an electrode pad. The second trench terminates in the semiconductor substrate layer. The manufacturing method also includes forming an insulation film that covers the surface of the semiconductor substrate layer as well as the side walls and bottoms of the first and second trenches. The manufacturing method also includes removing the insulation film from the bottoms of the first and second trenches to expose the electrode pad from the first trench bottom and to expose the semiconductor substrate layer from the second trench bottom. The manufacturing method also includes forming a conductive film that covers the semiconductor substrate layer and the side walls and the bottoms of the first and second trenches to form a through via electrically connected to the electrode pad at the first trench bottom and to form a contact part electrically connected to the semiconductor substrate layer at the second trench bottom. The manufacturing method also includes patterning the conductive film on the semiconductor substrate layer to form the external electrodes and to form a potential fixing external electrode electrically connected to the contact part.
Owner:LAPIS SEMICON CO LTD
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