1results about How to "Resolve slow performance" patented technology

This invention discloses a semiconductor device and a method for forming the same, wherein the semiconductor device includes: a semiconductor substrate; a gate structure located on the semiconductor substrate; a source region and a drain region located in the semiconductor substrate and on opposite sides of the gate structure; a sacrificial oxide layer located on the semiconductor substrate; a contact etch stop layer located on the sacrificial oxide layer; a lower interlayer dielectric layer located on the contact etch stop layer; a high-resistivity dielectric layer located on the gate structure and the lower interlayer dielectric layer; and a high-resistivity field plate, wherein the high-resistivity field plate is at least partially located on the high-resistivity dielectric layer.