81results about How to "Stable capacitance" patented technology

A thin film transistor device includes: an island shaped semiconductor layer; a metal film that covers at least a part of a source region and a drain region of the semiconductor layer; a gate insulating film that covers the semiconductor layer and the metal film; an interlayer insulating film that covers the gate insulating film; and a signal wire that lies on the interlayer insulating film. The gate insulating film and the interlayer insulating film are formed with contact hole that reaches the metal film. The signal wire is connected to the metal film through the contact hole.

There are provided a multilayer ceramic capacitor, a printed circuit board including the same, a method of manufacturing the multilayer ceramic capacitor, and a method of manufacturing the printed circuit board. The method of manufacturing a multilayer ceramic capacitor includes: preparing a capacitor body on which external electrode material layers are formed, dry polishing the capacitor body such that surfaces of the external electrode material layers are smooth and compact, and forming plating layers on the surfaces of the external electrode material layers in order to form external electrodes. Therefore, the surface smoothness, compactness, and uniformity of an external electrode plating layer can be improved.

A dielectric ceramic contains a BaTiO3-based compound as a main ingredient, and can be represented by the general formula: 100AmBO3+aNiO+bROn+cMOv+dMgO+eXOw where R represents a rare earth element such as Dy, M represents a metal element such as Mn, and X represents a sintering aid component containing Si. Ni is uniformly solid-solved in crystal grains, and the solid-solution region of the rare earth element in the crystal grains is an average 10% or less in terms of a cross section ratio. 0.96≦m≦1.030, 0.05≦a≦3, 0.1≦b≦1.5, 0.1≦c≦1.0, 0.1≦d≦1.5, and 0.05≦e≦3.5 are satisfied. A laminated ceramic capacitor has dielectric layers formed of the dielectric ceramic. As a result, a dielectric ceramic, and a laminated ceramic capacitor having excellent AC voltage characteristics, capable of keeping desired dielectric characteristics and excellent temperature characteristics, and having excellent withstand voltage and capable of ensuring reliability can be realized.

SPEEK solid electrolytes and preparation methods thereof are provided. The SPEEK solid electrolyte comprises sulfonated polyetheretherketone (SPEEK), an electrolyte, and a solvent. The electrolyte is a lithium salt.

A thin film transistor device includes a semiconductor layer including a source region, a drain region and a channel region formed above a substrate, a metal film formed in a prescribed area on the semiconductor layer, a gate insulating film formed on the metal film and the semiconductor layer, a gate electrode, an interlayer insulating film, and a line electrode. The metal film is formed on the source region and the drain region of the semiconductor layer, the area being at least a bottom of the contact hole. The thickness of the semiconductor layer in a region on which the metal film is not formed is smaller than the thickness of the semiconductor layer in a region on which the metal film is formed.

The invention discloses a lithium ion battery cathode material with a function of rapid charging and a preparation method thereof. The lithium ion battery cathode material with a function of rapid charging comprises a carbon core and a modified layer. The modified layer is formed on the surface of the carbon core by a sol-gel method, wherein the modified layer comprises a compound lithium metal oxide having a chemical general formula of Li4M5O12-MOx; M represents titanium or manganese; and x is great than or equal to 1 and is less than or equal to 2. In the invention, the modified layer comprising the compound lithium metal oxide having a chemical general formula of Li4M5O12-MOx is formed on the surface of the carbon core by the sol-gel method. A lithium metal oxide does not produce a solid electrolyte interface film in charging and discharging, does not produce strain and has a three-dimensional crystal structure. Therefore, the lithium ion battery cathode material with a function of rapid charging is beneficial for reduction of a common solid electrolyte interface (SEI) film on the surface of a carbon material, and enables lithium ions to pass through the compound lithium metal oxide to enter rapidly into the carbon material and thus realizing rapid charging.

The invention provides a method for manufacturing a solid polymer electrolytic condenser and belongs to the technical field of electronic elements. The method is characterized in that a first conducting polymer layer is prepared on the surface of tantalum pentoxide electrolyte, a second conduction polymer layer is prepared on the surface of the first conducting polymer layer, intrinsic conductive polymer is prepared on the first conducting polymer layer through the in-situ chemical oxidative polymerization method, the second conducting polymer layer is prepared through conducting polymer suspension liquid, and a middle adhesion layer is prepared between the first conducting polymer layer and the second conducting polymer layer through silane. The electrolytic condenser manufactured through the method is stable in electrical property like capacitance, leak currents, ESR and loss under various complex environments, and has high high-temperature resistance, high-humidity resistance and high-voltage resistance abilities.

An active matrix type electroluminescence display device comprises a plurality of display pixels GS11, GS12, GS13, etc. arranged in a matrix of rows and columns, each display pixel including an EL element, a first thin film transistor in which a display signal is applied to the drain and which is switched on and off in response to a select signal, a capacitance with one end connected to the source of the first thin film transistor for maintaining a voltage corresponding to the display signal, and a second thin film transistor for driving the EL element based on the display signal. The other ends of the capacitance of row display pixels are connected to and shared by a plurality of first capacitance lines HLA1, HLA2, HLA3, HLAi. Both ends of the plurality of first capacitance lines HLA1, HLA2, HLA3 are connected to and shared by second capacitance lines HLB1 and HLB2. A constant voltage is supplied to the second capacitance line.

A semiconductor device includes a first insulating film having a cavity, a second insulating film formed on the first insulating film and having an opening exposing the cavity, a lower electrode of a concave shape in cross section formed on the bottom and sides of the cavity, a capacitive insulating film formed on the lower electrode, and an upper electrode formed on the capacitive insulating film. The diameter of the cavity of the first insulating film is larger than that of the opening of the second insulating film, and the end of the second insulating film located on the sides of the opening is formed in an eaves-like part to project like eaves inwardly beyond the sides of the first insulating film.

To provide an electronic device that is difficult to see bubbles formed inside from the outside and has good visual confirmation. Grooves ( 39, 49). If the upper panel (30) and the lower panel (40) are bonded, the air bubbles (1) will be closed in the grooves (39, 49), since the grooves (39, 49) are formed in the non-permeable area as the non-visual recognition area. part (23), so it is difficult to see the air bubble (1) from the outside. Therefore, an electronic device with good visibility can be realized.

A semiconductor device includes two floating gates, a control gate and a first dielectric layer. The floating gates are disposed on a semiconductor substrate. The control gate partially overlaps each of the floating gates, and a part of the control gate is disposed between the two floating gates. Furthermore, the first dielectric layer disposed between the two floating gates and the control gate has a fixed thickness.

A metal foil for capacitor element is produced through a process comprising steps of etching and then electrochemically forming a metal foil after making cut lines each in a shape of a capacitor element with at least a part of a portion predetermined to be an anode-leading-out-part left uncut. The step of etching the foil is preferably performed with the anode-leading-out-parts being protected by protective material. Solid electrolytic capacitor elements prepared by using the metal foil have narrow variation in capacitance.

A dielectric ceramic represented by a general formula: 100BamTiO3+aROn+bMOv+cXOw (where R represents a rare earth element, M represents a predetermined metal element, and n, v, and w represent independently a positive number determined in accordance with the valences of the elements R and M and a sintering aid component X, respectively), and the solid solution regions of the secondary components in the main phase grains are 10% or less (including 0%) on average in terms of a cross-sectional area ratio. The sintering aid component X contains at least Si, and m, a, b, and c satisfy 0.995≦m≦1.030, 0.1≦a≦2.0, 0.1≦b≦3.0, and 0.1≦c≦5.0. In a monolithic ceramic capacitor, dielectric layers are formed from the above-described dielectric ceramic. Consequently, a dielectric ceramic having a good AC voltage characteristic, maintaining a desired large dielectric constant and a good temperature characteristic, exhibiting a small dielectric loss, and being capable of ensuring the reliability and a monolithic ceramic capacitor including the dielectric ceramic are realized.

The invention provides a chip for forming a thin capacitor applied in parts built-in multi-layer flexible printed wiring boards and provides a method for manufacturing the parts built-in multi-layer flexible printed wiring boards using the chip. The invention also relates a bonding film for the capacitor and the manufacturing method, which is used for forming the capacitor by bonding electrodes on two surfaces of a dielectric layer, wherein, the capacitor is built-in printed wiring boards to form the bonding film. The bonding film is characterized in that: having a dielectric layer (1) which has high dielectric constant and is formed by flowing materials which can not occur accompanying substantive thickness changing and transforming at the pressure and temperature of the pressing time when the electrodes are boned onto the dielectric layer and has two surfaces with cohesive property; and bonding resin layers (2, 3), which have the fluidity to fill the surrounding of the electrodes and are arranged on two surfaces of the dielectric layer (1).

The surface of a signal electrode is treated as substrate treatment. An oxide film on the surface of the signal electrode is removed by roughing. The roughened surface is used as a surface treated face. A coating of fluororesin is provided on the surface treated face for lining or thermal welding to the lining material. A signal electrode is provided in the resin lining. Since the oxide film was removed from the surface of the signal electrode for roughening, the adhesive force of the coating of the fluororesin is increased. The fluororesin coating and the resin lining melt each other, and the fluororesin coating is strongly bonded to the resin lining. The adhesion between the signal electrode and the resin lining is increased without opening a hole in the signal electrode. A method uses a primer film formed by substrate treatment on the surface of the signal electrode.

A semiconductor device includes a first insulating film having a cavity, a second insulating film formed on the first insulating film and having an opening exposing the cavity, a lower electrode of a concave shape in cross section formed on the bottom and sides of the cavity, a capacitive insulating film formed on the lower electrode, and an upper electrode formed on the capacitive insulating film. The diameter of the cavity of the first insulating film is larger than that of the opening of the second insulating film, and the end of the second insulating film located on the sides of the opening is formed in an eaves-like part to project like eaves inwardly beyond the sides of the first insulating film.

A dielectric ceramic contains a BaTiO3-based compound as a main ingredient, and can be represented by the general formula: 100AmBO3+aNiO+bROn+cMOv+dMgO+eXOw where R represents a rare earth element such as Dy, M represents a metal element such as Mn, and X represents a sintering aid component containing Si. Ni is uniformly solid-solved in crystal grains, and the solid-solution region of the rare earth element in the crystal grains is an average 10% or less in terms of a cross section ratio. 0.96≰m≰1.030, 0.05≰a≰3, 0.1≰b≰1.5, 0.1≰c≰1.0, 0.1≰d≰1.5, and 0.05≰e≰3.5 are satisfied. A laminated ceramic capacitor has dielectric layers formed of the dielectric ceramic. As a result, a dielectric ceramic, and a laminated ceramic capacitor having excellent AC voltage characteristics, capable of keeping desired dielectric characteristics and excellent temperature characteristics, and having excellent withstand voltage and capable of ensuring reliability can be realized.

A semiconductor integrated circuit device has a boosted-voltage power-supply circuit generating a boosted voltage, an internal circuit being driven with the boosted voltage, and a control circuit controlling the internal circuit by receiving the boosted voltage. The boosted-voltage power-supply circuit has a first output terminal for the internal circuit, and a second output terminal for the control circuit. The boosted voltage output from the second terminal has a specified level regardless of variation in the boosted voltage being output from the first terminal.

The present invention relates to an elastic fiber electrode including a hybrid fiber prepared by coating a carbon nanotube sheet on a polymer fiber, in which the hybrid fiber is in a yarn form having a coiled structure, and the carbon nanotube sheet makes a wrinkled surface, and a coil- or spring-type elastic fiber electrode manufactured by coiling a hybrid nanofiber prepared by coating a carbon nanotube sheet on a polymer fiber has excellent mechanical and electrical properties. In particular, the elastic fiber electrode has increased porosity by depositing manganese dioxide on a surface thereof, thereby enhancing electrochemical performance. Thus, a micro-supercapacitor using the elastic fiber electrode has high current density and excellent capacitance retention, may maintain the electrochemical characteristics even after being subjected to various deformations, such as bending, coiling, or weaving, and has high elasticity and reversible behaviors, thus providing stable capacitance.

The invention relates to a preparation method for a graphene aerogel composite electrode material loaded on nickel foam. The preparation method aims to solve the problem of accumulation and agglomeration of graphene sheet layers and small specific surface area of an electrode material. The preparation method comprises the steps that the pH value of graphene oxide dispersion liquid is adjusted to be 8-10 through ammonia water, and then reducing agent ammonia water is added; the pretreated nickel foam is added into a mixing solution, and the mixing solution is put into a reaction kettle for a hydrothermal reaction; and then dialysis is conducted in an ethanol aqueous solution, and then freeze drying is conducted. The specific capacitance of an electrode prepared by adopting the graphene aerogel composite electrode material is 216F / g under the current density of the 1A / g, the cyclicity and rate capability of the specific capacitance value of the electrode material are excellent, and aftercirculation for thousands of times, the capacitance retention rate is 92%. The preparation method is applied to the field of electrode materials.

A method of stabilizing parasitic capacitance in an LCD device. Pluralities of transversely expanding gate lines are formed on a substrate. A first insulating layer is formed on the substrate and the gate lines. By performing a photolithography procedure using a photomask, a plurality of longitudinally expanding data lines and a plurality of metallic light shield layers are formed on part of the first insulating layer, wherein the metallic light shield layers are located on both sides of the data line. A second insulating layer is formed on the metallic light shield layers and the data lines. Transparent conductive layers are formed on part of the second insulating layer. Moreover, conductive plugs penetrating the second insulating layer are formed to electrically connect the metallic light shield layers and the transparent conductive layers.

An electronic system comprising an electronic body (301) with terminal pads (310) and at least one capacitor embedded in the electronic body. The capacitor including an insulating and adhesive first polymeric film (302) covering the body surface except the terminal pads; a sheet (320) of high-density capacitive elements, the first capacitor terminal being a metal foil (321) attached to film (302), the second terminal a conductive polymeric compound (324), and the insulator a dielectric skin (323). Sheet (320) has sets of via holes: the first set holes reaching metal foil 321), the second set holes reaching the terminals (310), and the third set holes reaching the conductive polymeric compound (324). An insulating second polymeric film (303) lining the sidewalls of the holes and planarizing the sheet surface; and metal (432) filling the via holes between the polymeric sidewalls and forming conductive traces and attachment pads on the system surface.

A variable capacitor includes a plurality of variable capacitor elements connected in parallel with one another, the variable capacitor elements each including a fixed electrode and a movable electrode facing each other, a beam supporting the movable electrode displaceably, and a drive electrode supplied with a drive voltage to change spacing between the fixed electrode and the movable electrode. The variable capacitor further includes a drive control unit configured to sequentially apply an AC drive voltage to the drive electrodes of the variable capacitor elements with a predetermined phase difference for each element. The sum of capacitances of the variable capacitor elements is an output capacitance.

Object is to provide a material for forming of the capacitor layer which generates no crack in drilling on the dielectric layer of the capacitor in manufacturing of a highly multilayered printed wiring board embedded a capacitor circuit. To achieve the object, copper clad laminate for forming of an embedded capacitor layer of a multilayered printed wiring board including an embedded capacitor circuit having a layer structure of copper layer / dielectric layer of the capacitor / copper layer in an inner layer characterized in that the Young's modulus Er of the resin film constituting the dielectric layer of the capacitor along the thickness direction is less than 6.1 GPa is employed.

A first electrode is integral to a beam having two ends securedly affixed to a support fixed onto a substrate. Residual stresses cause buckling of the beam so that the arch of the beam is close to at least one second electrode. The support can be formed by a ring fixed to the substrate by means of two fixing bases arranged on each side of the ring on a fixing axis passing through the centre of the ring, the beam being arranged on a diameter of the ring perpendicular to the fixing axis. The ring comprises at least one layer tensile stressed along the fixing axis. The beam can comprise at least one layer stressed in compression along a longitudinal axis of the beam. The second electrode can be integral to an additional support, the beam being arranged between the substrate and the second electrode.

The present invention relates to an elastic fiber electrode including a hybrid fiber prepared by coating a carbon nanotube sheet on a polymer fiber, in which the hybrid fiber is in a yarn form having a coiled structure, and the carbon nanotube sheet makes a wrinkled surface, and a coil- or spring-type elastic fiber electrode manufactured by coiling a hybrid nanofiber prepared by coating a carbon nanotube sheet on a polymer fiber has excellent mechanical and electrical properties. In particular, the elastic fiber electrode has increased porosity by depositing manganese dioxide on a surface thereof, thereby enhancing electrochemical performance. Thus, a micro-supercapacitor using the elastic fiber electrode has high current density and excellent capacitance retention, may maintain the electrochemical characteristics even after being subjected to various deformations, such as bending, coiling, or weaving, and has high elasticity and reversible behaviors, thus providing stable capacitance.

The invention discloses an isomorphous cobaltosic oxide@cobaltosic oxide nuclear shell structure material and a preparation method and application thereof. The preparation method comprises: (1), haptoreaction, cleaning, drying, and annealing are carried out on soluble cobalt salt, ammonium fluoride, urea, water and foamed nickel to obtain an alkaline Co3O4 monomer; and (2), hydrothermal reaction, cleaning, drying, and annealing are carried out on methenamine, soluble cobalt salt, ethyl alcohol, water and the alkaline Co3O4 monomer to obtain a isomorphous cobaltosic oxide@cobaltosic oxide nuclear shell structure material. With the method, the isomorphous cobaltosic oxide@cobaltosic oxide nuclear shell structure material with high specific capacitance and cycling stability can be prepared; and the material can be used as an electronic material of an electrochemical capacitor. Meanwhile, the preparation method has advantages of simple operation, low cost, mild condition, and good going-green and environment-friendly effects.

There is provided an electrode material for electrolytic capacitor that attains an unprecedentedly high capacitance. The electrode material for electrolytic capacitor comprises a layer of valve metal particles furnished on the surface thereof with an oxide film, the layer having a porosity of 20 to 60% and a specific surface area of 30×103 to 400×103 cm2 / cm3, wherein the valve metal particles are mixed together, with the particle diameters exhibiting a given distribution at least within the range of 0.005 to 0.1 μm, and form a base material surface, and wherein the valve metal consists of aluminum, and wherein the composition ratio of Al / O of the layer of valve metal particles furnished on the surface thereof with the oxide film is within the range of 2.0 to 5.5. The electrode material thus realizes high capacitance.