The invention discloses a circular large-dimension IGBT
chip crimping packaging structure and a manufacturing method. The circular large-dimension IGBT
chip crimping packaging structure comprises an emitting
electrode end cover, emitting
electrode molybdenum sheets, a gate spring needle
assembly, gate
metal, an emitting
electrode molybdenum sheet positioning frame, flexible conductive
metal thin sheets, emitting electrode
metal, an IGBT
chip, collector electrode metal, collector electrode
molybdenum sheets with positioning holes, a collector electrode end cover and the like which are arrangedfrom the top to bottom in sequence. By adopting the crimping packaging structure, a fault sector region isolation method is simple, so that only the fault region sector conductive molybdenum sheets need to be changed into insulating sheets, and the gate metal specific connecting position on the surface of the chip is
cut off; a device is subjected to two-sided heat dissipation through the collector electrode end cover and the emitting electrode end cover; metal bonding wires and a
welding interface are omitted, so that the
bottleneck of conventional device bonding point and
welding layer fatigue failure can be eliminated, and relatively
high resistance to
thermal mechanical fatigue can be achieved; the interior of the device adopts symmetrical structural design, so that
stray inductance ofeach sector region in the interior can be lowered, the
stray inductance distribution can be consistent, the parasitic parameter of a module can be reduced, and the
electrical performance of the device can be improved.