48results about How to "Good binding properties" patented technology

While a semiconductor device is provided with a plurality of element electrodes 5 formed on a semiconductor element 4 and a plurality of lead terminal electrodes 6 formed on a lead frame, the semiconductor device is equipped with a coupling conductor which electrically connects at least one electrode among the above-described element electrodes 5 to at least one electrode among the above-described lead terminal electrodes 6; the above-described coupling conductor is manufactured by a first conductor 1 and a second conductor 2, the major components of which are metals; the first conductor 1 has been electrically connected to the second conductor 2; and the element electrodes 5 and the lead terminal electrodes 6 have been electrically connected to the second conductor 2 respectively.

Disclosed is an aqueous binder composition for mineral fibers that comprises a water-soluble binder component produced by reacting, in one or more steps, at least one alkanolamine, at least one carboxylic anhydride and at least one polyalkylene glycol component selected from polyalkylene glycols, copolymers and derivates thereof and, optionally, treating the reaction product with a base.

The invention discloses a nano imprinting device and method for imaging a sapphire substrate. The nano imprinting device comprises a nano imprinting mould, an ultraviolet nano imprinting resist, the sapphire substrate and an exposure ultraviolet light source, wherein the ultraviolet nano imprinting resist is spread on the sapphire substrate, the exposure ultraviolet light source is arranged below the sapphire substrate, and a characteristic cavity is arranged on the nano imprinting mould to form a characteristic image on the mould. By using a modified fluorocarbon resin-based hard polymer mould which has lowest surface energy and the advantages of a soft mould and a hard mould and better mechanical and physical performances and by combining the sapphire substrate which has better light transmission property relative to ultraviolet rays, the above-4 inch large-size wafer level nano imaged sapphire substrate is manufactured in a low-cost, high-productivity and large-scale manner. The invention can also be used for imaging other transparent substrates (such as a ZnO substrate).

A semiconductor device includes a supporting substrate, a conductive layer placed on the supporting substrate, and at least one group III nitride semiconductor layer placed on the conductive layer. Of the group III nitride semiconductor layers, a conductive-layer-neighboring group III nitride semiconductor layer has n type conductivity, dislocation density of at most 1×107 cm−2, and oxygen concentration of at most 5×1018 cm−3. Thus, an n-down type device having a semiconductor layer of high crystallinity can be provided.

A coated layer of ceramics contains cubic-phase ZrW2O8 sosoloid microcrystal doped by 3-valence metal element, Mo, or P and non-crystal glass, phase, and is prepared through preparing wet gel of multi-element tungstate, centrifugal coating on the zero-expansion quartz glass substrate several times, and heat treating. Its advantage is negative expansion coefficient (-2.0- -0.3X10 to the power -6 / deg.C for -20-80 deg.C).

The present invention provides human papillomavirus E6 gene T cell epitope-specific T cell receptor murine m2P8D TCR, its humanized form h2P8D TCR, and their antigen-binding fragments. The two T cell receptors are composed of α , β two peptide chains, and also provide nucleic acid encoding them, the vector containing the nucleic acid, the host cell containing the vector and their anti-tumor application; also provide the T cell epitope specific T cell of human papillomavirus E6 gene Cell receptor murine m2P8D TCR, its humanized form h2P8D TCR and methods for their preparation. The two specific T cell receptors and antigen-binding fragments thereof can serve as immune effector activators to stimulate the immune response of the body, thereby producing anti-tumor and other diseases.

The invention provides a simulation method for strengthening and lightening an airship gasbag of a stratospheric airship, the stratospheric airship and a manufacturing method for the stratospheric airship. The simulation method comprises the following steps of (1), determining a basic shape of the stratospheric airship needed to be researched, and performing modeling on the shape; (2) performing simulation calculation to obtain airship gasbag surface stress distribution of the airship under a maximum overpressure condition; (3) according to related characteristics and a safety coefficient of an airship gasbag material, defining that an airship gasbag surface stress of the airship under the maximum overpressure condition is greater than a maximum safety stress, and serving as a reinforcement rib strengthening region; (4) selecting and using a proper reinforcement rib material to meet a lightweight requirement; arranging a plurality of reinforcement fiber ribs in circumferential and longitudinal directions in a simulated manner in the reinforcement rib strengthening region to strengthen the airship gasbag; and (5) after the airship gasbag is strengthened, performing simulation calculation again to obtain the airship gasbag surface stress distribution, and according to the maximum stress, selecting a proper low-density material to be applied to the airship gasbag.