44results about How to "Improve transfer characteristics" patented technology

The invention relates to the field of heat dissipation systems, and particularly relates to a computer water cooling system based on pulsating flow. The computer water cooling system comprises an integrated water cooling tank and a monitoring system, wherein the integrated water cooling tank comprises a liquid storage chamber, a diversion chamber, a refrigeration chamber, a heat dissipation chamber and a DC water pump, which are integrally formed, the refrigeration chamber and the heat dissipation chamber are isolated by a thermal insulation partition board, a hot end face of a semiconductor refrigeration piece faces to the heat dissipation chamber and is attached to heat dissipation fins, a cold end face of the semiconductor refrigeration piece is attached to a cooling fin substrate embedded in the thermal insulation partition board, cooling fins stretching into the refrigeration chamber are arranged on the cooling fin substrate, and a fan is arranged on the heat dissipation fins; and the monitoring system comprises an MCU for controlling the DC water pump and the semiconductor refrigeration piece, and the MCU generates a half sine wave signal to drive the DC water pump to generate the pulsating flow. The DC water pump is driven to generate the pulsating flow in a half sine wave mode, the mode is simple and convenient, the heat dissipation efficiency is high, and the accumulation of impurities in a water flow path is avoided; the integrated structure is convenient to install, is small in water leakage possibility and is high in reliability; and the water leakage and temperature are monitored from multiple aspects, and the system carries out multidirectional protection.

The invention discloses a method for preparing a manganese phosphate iron phosphate-carbon composite material and the manganese phosphate iron phosphate-carbon composite material. The method comprisesthe following steps of (1) respectively preparing soluble manganese phosphate-containing solution A, soluble organic ferric salt solution B, soluble organic manganese salt solution C and soluble organic lithium salt solution D; (2) mixing the solution A, B, C and D according to a predetermined element molar ration so as to obtain precursor solution; (3) drying and pelleting the precursor solutionobtained in the step (2) to obtain manganese phosphate iron phosphate precursor powder; (4) sintering the precursor powder obtained in the step (3) under a protection atmosphere to obtain a sinteredmaterial; and (5) carrying out smashing thinning and vacuum packaging on the material obtained in the step (4) to obtain the manganese phosphate iron phosphate-carbon composite material. The method issimple and easy to do and suitable for large-scale industrial production. The obtained material can be used as an active material for the anodes of the lithium ion batteries, and is low in resistivity and excellent in electrochemical performance.

Disclosed is a thin film transistor substrate which facilitates to improve output and transfer characteristics of thin film transistor, wherein the thin film transistor substrate comprises a thin film transistor comprising a lower gate electrode on a substrate, an active layer on the lower gate electrode, source and drain electrodes on the active layer, and an upper gate electrode on the source electrode, drain electrode and active layer, the upper gate electrode for covering a channel region defined by the source and drain electrodes; and a contact portion for electrically connecting the lower gate electrode with the upper gate electrode.

A laser patterning apparatus for handling a donor film and improving compression uniformity between the donor film and an acceptor substrate is provided. The laser patterning apparatus includes: a stage that supports an acceptor substrate; a shielding mask that is placed on the acceptor substrate to form a pattern and is attached to a donor film on one surface thereof; a laser gun that is disposed at an upper part of the stage to radiate laser light to a portion of the donor film through the pattern of the shielding mask; a pressing member that corresponds to a portion of the shielding mask; and an actuator that is connected to one side of the pressing member to press the pressing member.

The invention discloses a high damping vibration test clamp which comprises a connecting bottom board (1), a connecting vertical board (1) and reinforcing ribs (3), and further comprises a high damping rubber layer (4) and a restraint layer (5). The connecting bottom board (1) is horizontally placed, the connecting vertical board (2) is vertically placed, and the connecting vertical board (2) and the connecting bottom board (1) are fixed in a welded manner; the reinforcing ribs (3) are perpendicular to the connecting bottom board (1) and the connecting vertical board (2) and welded to the connecting bottom board (1) and the connecting vertical board (2) respectively. The high damping vibration test clamp is connected with a platform board of a vibration platform through threaded holes in the connecting bottom board (1); and a detected device is connected with the high damping vibration test clamp through threaded holes in the connecting vertical board (2) and threaded holes in the connecting bottom board (1). According to the high damping vibration test clamp, the high damping rubber layer adheres to the surface of the clamp and the restraint layer is added to the high damping rubber layer, so that the damping of the clamp is increased, and therefore the transmission characteristics of the clamp are effectively improved.

Disclosed is a polymer composition containing 5-100% by mass of a lactone compound unit (A) represented by the general formula (1) and 0-95% by mass of a (meth)acrylate unit (B) as the constitutional units. The lactone compound unit (A) contains a unit (S) represented by the general formula (2) and a unit (R) represented by the general formula (3) in a mass ratio of from 70/30 to 30/70. The polymer composition has a total light scattering loss of not more than 100 dB/km, and is excellent in heat resistance and transparency.

The invention relates to a high-transfer-characteristic low-stray-capacitance embedded grid insulation tunneling enhanced transistor. Compared with MOSFETs or TFETs of the same size as the high-transfer-characteristic low-stray-capacitance embedded grid insulation tunneling enhanced transistor, the better transfer characteristic is achieved by means of the extremely sensitive mutual relation between the impedance of a tunneling insulation layer and the electric field intensity inside the tunneling insulation layer; the problem that stray capacitance among a grid source, a source grid, a grid drain and a drain grid is obviously increased due to the fact that the distance between a grid electrode and a drain electrode or the distance between the grid electrode and a source electrode is gradually decreased is solved; the high transfer characteristic of a device is ensured, and meanwhile the stray capacitance is obviously reduced; due to the fact that no grid-drain overlay area arranged on the MOSFETs or TFETs exists, no obvious reverse leakage current will be caused. The invention further provides a specific manufacturing method of the high-transfer-characteristic low-stray-capacitance embedded grid insulation tunneling enhanced transistor. The high-transfer-characteristic low-stray-capacitance embedded grid insulation tunneling enhanced transistor obviously improves the working characteristic of a nanoscale integrated circuit unit, and is applicable to application and popularization.

Disclosed is a toner for developing an electrostatic latent image, the toner comprising a plurality of toner particles, each toner particle includes: a core particle that contains a binding resin, a coloring agent, and a releasing agent; and an external additive attached to the surface of the core particle, wherein the toner has two endothermic peaks in a heat curve, which is obtained at the time of the secondary temperature rise in differential scanning calorimetry of the toner, and a stepped endothermic curve; and first and second melting temperatures, which are determined to be the locations of vertices of the two endothermic peaks, a glass transition temperature, which is determined to be the midpoint of a linear portion of the stepped endothermic curve, and first and second heat of melting, which are determined to be the areas of the two endothermic peaks, satisfy the condition set forth herein.

The invention discloses a double-mandrel direct-connection precise rotating shaft. The double-mandrel direct-connection precise rotating shaft comprises a main mandrel and a mandrel, wherein the mandrel penetrates and is fixedly connected with a wave generator of a harmonic reducer, the large end of the main mandrel is fixedly connected with a flexible gear of the harmonic reducer, a rigid gear of the harmonic reducer is fixedly connected with a B shaft outer cover, a first contact ball bearing and a second contact ball bearing are fixed on the inner side of the B shaft outer cover, which is close to the harmonic reducer, a third contact ball bearing and a fourth contact ball bearing are fixed on the inner side of the B shaft outer cover, which is far away from the harmonic reducer, inner rings and outer rings of the first, second, third and fourth contact ball bearings are connected with inner and outer ring sleeves respectively, and a first flange and a second flange are disposed at two ends of the B shaft outer cover. According to the double-mandrel direct-connection precise rotating shaft, two mandrels are arranged inside, and the small mandrel drives the large mandrel through the harmonic reducer.

The present invention provides a wiring substrate with unchanged shape and area and excellent transmission characteristic. The wiring substrate comprises the following components: a ground layer (GND) which is supplied with a ground potential; an insulation layer (L1) which is configured on the ground layer (GND); a first wiring (WL) and a second wiring (WR) which are configured oppositely with the ground layer through the insulation layer (L1) and transmit signal through a differential transmission mode, wherein the ground layer (GND) is made of material which has resistivity that is higher than those of the first wiring (WL) and the second wiring (WR).

The present invention relates to a novel compound and, especially, to a novel compound, which has excellent hole and electron transfer characteristics when applied to an organic light emitting element, can attain high triplet state energy and high Tg at the same time, and allows the organic light emitting element to have a low driving voltage, low consumption power, high efficiency, and long lifespan, and to an organic light emitting element comprising the same.