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51results about How to "Reduced temperature distribution" patented technology

Preparation method of cathode heater assembly with high power and long service life

ActiveCN107768210AOvercoming the problem of uneven axial temperature distributionReduce heating powerDischarge tube solid thermionic cathodesThermionic cathode manufactureCold sideRhenium
The invention discloses a preparation method of a cathode heater assembly with high power and long service life. The preparation method comprises the following steps: using a rhenium tungsten wire toprepare a double-end double-screw cylinder heater prefabticated member; putting the double-end double-screw cylinder heater prefabticated member on a half-cylinder heater forming die to form a double-end double-screw cylinder heater; putting the double-end double-screw cylinder heater into a circular ring cavity die and uniformly arranging screw pitches to be bent into a circular heater prefabticated member; carrying out blackening, insulating layer coating and sintering treatment on the heater prefabticated member in sequence to form a required heater; enabling the space of a cathode and theheater to be filled with a ceramic filler; and then sintering to prepare the cathode heater assembly. By adopting the double-end double-screw ring structure, the problem, that the temperature distribution in the axial direction of the cathode is nonuniform caused by a cold side effect at two ends of the cathode, of a previous double-screw filament cathode is overcome, the temperature distributionon the surface of the cathode is uniform, and the operating point temperature of the cathode can be reduced; and according to the prepared cathode heater assembly, the starting time for cathode operation can be shortened by about one half, and the heating efficiency of the cathode is reduced.
Owner:湖北汉光科技股份有限公司

High-thermostability super-junction stress Si/SiGe heterojunction bipolar transistor

The invention discloses a super-junction stress Si/SiGe heterojunction bipolar transistor with a high thermostability. A SiGe virtual substrate structure is adopted by the transistor; and a Si<1-y>Ge<y> secondary collector region, a relaxation Si<1-y>Ge<y> collector region, a stress Si<1-x>Ge<x> base region and a stress Si emitter region are respectively and epitaxially grown on the SiGe virtual substrate structure. According to the transistor, by introducing a super-junction p-type layer parallel to the stress Si<1-x>Ge<x> base region to the relaxation Si<1-y>Ge<y> collector region, the purposes of improving the electric field distribution in a collector junction space-charge region, reducing the peak electronic temperature, inhibiting the impact ionization and improving a device breakdown voltage are achieved; and meanwhile, with the introduction of the super-junction p-type layer, the doping concentration and the phonon scattering rate of the relaxation Si<1-y>Ge<y> collector region are effectively reduced, and the thermal conductivity of the relaxation Si<1-y>Ge<y> collector region is improved; the transistor has the characteristics of large current gain and high breakdown voltage; the internal temperature distribution is significantly reduced, the characteristic frequency and the temperature sensibility are improved, and the high-thermostability work can be realized in a relatively wide working temperature range.
Owner:BEIJING UNIV OF TECH

Neural network accelerator heat effect optimization method based on memristor cross array

A neural network accelerator heat effect optimization method based on a memristor cross array comprises the following steps: 1, establishing a rapid temperature distribution calculation model: selecting pulse power of one point in an actual power matrix to divide the pulse power by the volume to obtain a pulse heat source value, inputting the pulse heat source value into ANSYS software to obtain a pulse temperature matrix, and carrying out convolution on the obtained pulse temperature matrix and the actual power matrix to be divided by the pulse power to obtain an actual temperature distribution matrix; 2, establishing an MLP neural network failure evaluation model: applying a distribution matrix of the actual temperature T obtained by the rapid temperature distribution calculation model to the MLP neural network failure evaluation model to obtain the influence of the actual temperature T on a weight value in the MLP neural network model; and 3, carrying out MLP neural network model mapping of off-line thermal optimization. According to the design, the arrangement of the memristor array is optimized, the influence of temperature rise on the memristors is reduced, and the precision of the offline training process of the neural network is improved.
Owner:WUHAN UNIV OF TECH

Combustion assembly structure of turbojet engine

The invention discloses a combustion assembly structure of a turbojet engine. The combustion assembly structure is characterized in that a guider and a front cover are arranged at the two ends of a case with a cavity structure in the middle respectively, a shaft sleeve coaxial with the case is fixed to the guider, a diffuser is fixed to the outer ring of the other end of the shaft sleeve, the sections, along the axis of the shaft sleeve, of the connecting faces between guide vanes and the shaft sleeve are in a V shape, the outer ring of the shaft sleeve is provided with a double-layer annularcombustion tank coaxial with the shaft sleeve, the section, along the axis of the shaft sleeve, of the end face of one end of the double-layer annular combustion tank is V-shaped, the two V-shaped structures enable gas entering from the diffuser to be attached to the wall face of the V-shaped structure of the double-layer annular combustion tank better, meanwhile, the gas entering from the diffuser is prevented from flowing back at a gas inlet, the velocity field is more uniform, the high-speed flow field is optimized, a local high-speed area is avoided, a main combustion area of a combustionchamber can be advanced, and the outlet temperature of the combustion chamber is further reduced; and the axial distance between the diffuser and the double-layer annular combustion tank is reduced, so that the total length of the engine is reduced, the weight of the engine is reduced, and miniaturization of the combustion assembly of the turbojet engine is facilitated.
Owner:NAT INST CORP OF ADDITIVE MFG XIAN

High thermal stability superjunction strained si/sige heterojunction bipolar transistor

The invention discloses a super-junction stress Si / SiGe heterojunction bipolar transistor with a high thermostability. A SiGe virtual substrate structure is adopted by the transistor; and a Si<1-y>Ge<y> secondary collector region, a relaxation Si<1-y>Ge<y> collector region, a stress Si<1-x>Ge<x> base region and a stress Si emitter region are respectively and epitaxially grown on the SiGe virtual substrate structure. According to the transistor, by introducing a super-junction p-type layer parallel to the stress Si<1-x>Ge<x> base region to the relaxation Si<1-y>Ge<y> collector region, the purposes of improving the electric field distribution in a collector junction space-charge region, reducing the peak electronic temperature, inhibiting the impact ionization and improving a device breakdown voltage are achieved; and meanwhile, with the introduction of the super-junction p-type layer, the doping concentration and the phonon scattering rate of the relaxation Si<1-y>Ge<y> collector region are effectively reduced, and the thermal conductivity of the relaxation Si<1-y>Ge<y> collector region is improved; the transistor has the characteristics of large current gain and high breakdown voltage; the internal temperature distribution is significantly reduced, the characteristic frequency and the temperature sensibility are improved, and the high-thermostability work can be realized in a relatively wide working temperature range.
Owner:BEIJING UNIV OF TECH
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