52results about How to "Reduced temperature distribution" patented technology

A battery module (110) is provided with a battery pack (10) which configures a plurality of single lithium batteries to at least two segments and a casing (20) for holding the single lithium batteries, wherein, an inlet side flowpath (60) and an outlet side flowpath (61) are staggered in the height direction of the casing (20). Furthermore a height h1 of the inlet side flowpath (60) and a height h2 of the outlet side flowpath (61) are equal. Furthermore a clearance delta1 between the single lithium batteries (11) and a clearance delta2 between single lithium batteries (11) at two ends of each single battery row and the casing (20) are set to an approximate same dimension. The flowing direction of the cooling medium (4) which is introduced into the inlet side flowpath (60) is shunt to the side of the inlet side flowpath (60) and the clearance delta2. According to the structure, each single lithium battery (11) can be distributed with the cooling medium (4) with uniform flow capacity for cooling each single lithium battery (11).

A heating system 25 has a main electric heat-generating element 3 and a heating surface 4a for heating an object, auxiliary electric heat-generating elements 5A to 5D, and a main power source 1 for supplying power to the main heating element. The system 25 further has an auxiliary power source 2 for supplying power to the auxiliary heating elements, and a power source controller for controlling the power supplied to the main heating element and to the auxiliary heating elements respectively and independently. Power supplied to the main heating element 3 is controlled by the controller within a first power range and power supplied to the auxiliary heating elements is controlled by the controller within a second power range. The second power range has a width smaller than that of the first power range so as to control temperature distribution on the heating surface 4a.

A cooling apparatus (1) has a compressor (2), a condenser (3), an expansion valve (5), an evaporator (6) and an electric valve (10), all connected to each other in this order by a piping line to form a refrigeration circuit. The apparatus further has a heating section (11) and a bypass (12), and a thermosensitive tube (13) of the expansion valve is disposed between the heating section (11) and the electric valve (10) so that temperature of a refrigerant having left this section is detected before entering this valve (10). The refrigerant remains as a gas-liquid mixture until it leaves the evaporator (6) such that temperature of the refrigerant is uniform within the evaporator and equal to the saturation vapor temperature of this refrigerant, and therefore fluctuation in the refrigerant temperature is diminished.

This hollow turbine blade comprises airfoil bodies 36 formed on the rear wall 42 of the blade and the front wall 44 of the blade and washed down by combustion gas 11, at least one partition wall 48 formed inside a turbine blade 30, and the at least one slit 56 formed on the combustion gas side of the blade walls 42, 44 and extending along the blade axis. The airfoil bodies comprise a height H equal to a distance between a blade pedestal 32 and an airfoil body end 58 measured along the blade axis. The partition wall joints the rear wall 42 of the blade to the front wall 44 of the blade at the joined portion 50. The slits 56, 62 are positioned in the blade walls 42, 44 on the combustion gas side to face the joined portion 50 formed of the partition wall 48 and the blade walls 42, 44.

A positioning system includes a stage configured to move while carrying an object thereon, an interferometer configured to measure a position of the stage, a driving unit configured to drive the stage, a heater provided between a light path of the interferometer and a coil which is a component element of the driving unit, and a cooling jacket configured to cover the coil and to circulate a cooling medium therein. The heater is provided on a surface of the cooling jacket.

A method of effecting high temperature vacuum heating and cooling suitable for conducting heat treatment to be performed on components used in a display apparatus. The heating / cooling method includes the steps of: heating a plate-like member placed in a reduced pressure atmosphere in a chamber by heating means opposed to the plate-like member; and cooling the plate-like member by a cooling plate which is opposed to the plate-like member, with the heating means therebetween, the cooling plate having a heat reflecting function. The cooling plate has an emissivity of not less than 0.50 but not more than 0.80 so as to minimize a sum of a requisite time for the heating step and a requisite time for the cooling step.

There is provided a magnetic field generator which is capable of generating a uniform magnetic field of a desired intensity easily and stably without increasing running cost. The magnetic field generator includes a pair of plate yokes. The plate yokes have opposed surfaces provided with magnetic pole respectively. The magnetic pole includes a permanent magnet group whereas the magnetic pole includes a permanent magnet group. Each of the permanent magnet groups is formed substantially in a disc like shape, as an integral body made of a plurality of permanent magnets and a plurality of heat conducting members. Tubular heaters, buried in the plate yokes, generate heat, which is conducted via the plate yokes to each permanent magnet and each heat conducting member which constitute the permanent magnet groups.

The invention discloses a super-junction stress Si / SiGe heterojunction bipolar transistor with a high thermostability. A SiGe virtual substrate structure is adopted by the transistor; and a Si<1-y>Ge<y> secondary collector region, a relaxation Si<1-y>Ge<y> collector region, a stress Si<1-x>Ge<x> base region and a stress Si emitter region are respectively and epitaxially grown on the SiGe virtual substrate structure. According to the transistor, by introducing a super-junction p-type layer parallel to the stress Si<1-x>Ge<x> base region to the relaxation Si<1-y>Ge<y> collector region, the purposes of improving the electric field distribution in a collector junction space-charge region, reducing the peak electronic temperature, inhibiting the impact ionization and improving a device breakdown voltage are achieved; and meanwhile, with the introduction of the super-junction p-type layer, the doping concentration and the phonon scattering rate of the relaxation Si<1-y>Ge<y> collector region are effectively reduced, and the thermal conductivity of the relaxation Si<1-y>Ge<y> collector region is improved; the transistor has the characteristics of large current gain and high breakdown voltage; the internal temperature distribution is significantly reduced, the characteristic frequency and the temperature sensibility are improved, and the high-thermostability work can be realized in a relatively wide working temperature range.