The application relates to the field of
semiconductor technology and discloses a
microwave reflection photoconductance measurement
system for
wafer film
carrier lifetime, which comprises a reconfigurable differential metasurface probe, which interacts with a
wafer film to be measured in a near-field
coupling mode; an optical excitation module, which performs pulsed
light irradiation on the
wafer film below a measurement area to generate non-equilibrium carriers; a dual-channel
microwave transceiving module, which feeds
microwave signals to the measurement area and a reference area; a closed-loop
feedback control module, which receives the differential
signal as input before the optical excitation module works; and a
data acquisition and
processing module, which collects transient changes of the differential
signal after the optical excitation module works. The closed-loop
feedback control module actively adjusts the
microwave response of the reconfigurable probe reference area, the differential
signal baseline is locked to zero before measurement, common-mode
noise is suppressed, and the signal-to-
noise ratio of the transient
decay curve and the measurement accuracy are improved.