The invention relates to the technical field of
chip analysis and discloses a
crystal back preparation method of an ultrathin
chip. The method comprises the following steps that: S1, a the
tin spherical surface of the
chip is fixed by using a
hot melt adhesive which is uniformly smeared; S2, a board carrier is
cut, wherein the maximum cross-sectional area of the board carrier is greater than the maximum cross-sectional area of the chip; S3, the chip is bonded to the board carrier through the
hot melt adhesive, a clamping groove shaped to match with the chip is formed in the middle of the boardcarrier, and the back face of the chip is clamped in the clamping groove; S4, the board carrier on the surface is ground so as to be removed, so that the back surface of the chip can be exposed; S5,the
adhesive on the back surface of the chip is removed by a chemical method; and S6, a sample is removed. In the
grinding process, borne force can be evenly distributed by the board carrier; meanwhile, the board carrier can increase
grinding resistance, and therefore, the progress of the
grinding can be more easily controlled when thickness is reduced, grinding uniformity and quality are improved, cracks cannot occur on the back surface of the chip, and the grinding is more uniform.