The invention provides a method for correcting a
capacitance measurement value under large electric leakage, and provides a parallel binary model for measuring the
capacitance value of a
gate oxide layer of a
gate oxide MOS (
Metal Oxide Semiconductor) device, and the parallel binary model is a parallel circuit model formed by connecting a parallel
capacitor Cp and an equivalent
resistor Rp in parallel; selecting the parallel binary model through an LCP tester, and measuring the
gate oxide MOS device by adopting a frequency f1 to obtain a parallel
capacitance Cp1 and a parallel conductance Gp1; calculating a
dissipation factor D1 when D1lt; when the value is 0.1, the measured
shunt capacitance Cp1 is the capacitance value of the gate
oxide layer in the gate
oxide MOS device; when D1gt; when the capacitance value is 0.1, a parallel binary model is selected through an LCP tester, the gate
oxide MOS device is measured by adopting the frequency f2, parallel capacitance Cp2 and parallel conductance Gp2 are obtained, and the actual capacitance value C of the gate oxide layer of the gate oxide MOS device is obtained.