37results about How to "Simplify the polishing process" patented technology

The invention relates to a super-hard semiconductor material polishing method. According to the method, a machined super-hard semiconductor material can be extremely low in surface roughness and have an atomic stepped surface through three polishing process flows with very approximate parameters, including rough polishing, fine polishing and chemico-mechanical polishing. Due to the fact that only the three processes are used, the method simplifies the super-hard material polishing flows greatly, lowers cost, guarantees the consistency and stability of machining quality and improves the rate of finished products.

The invention discloses a preparation method of a polished porcelain glazed tile with a flashing effect. The preparation method comprises the following steps of S1, mixing high-purity zircon sand andcrystallized frit dry particles to obtain glaze A; S2, taking marble polished glaze or transparent dry granular glaze as glaze B, and mixing the glaze A and the glaze B to obtain mixed glaze; S3, preparing a porcelain tile green body, and drying the porcelain tile green body; S4, applying a cover glaze to the porcelain tile green body dried in the step S3, performing ink-jet printing, and then sequentially applying a protective glaze and the mixed glaze; S5, drying the porcelain tile green body coated with the protective glaze and the mixed glaze in S4 in a drying kiln at 150-200 DEG C, and firing the porcelain tile green body by using a conventional porcelain tile firing method to obtain a semi-finished porcelain tile; and S6, polishing the semi-finished porcelain tile prepared in the S5.The preparation method adopts multiple reflection, dispersion and refraction methods of crystals in the glaze to realize the flashing effect, and meets the market demand.

A polishing disk capable of adjusting regional pressure is disclosed, which relates to a mechanical polishing tool. The polishing disk capable of adjusting regional pressure is provided with a piezoelectric sensor, a polishing disk, slide block and slide groove pairs, polyurethane polishing plates and a circular chuck, wherein at least two circular rings are disposed on the polishing disk and divided into fan-shaped blocks; the slide block and slide groove pairs are disposed on the fan-shaped blocks; two polyurethane polishing plates are attached to the surface of each fan-shaped block; an inward groove for placing the piezoelectric sensor is disposed between the two polyurethane polishing plates; and the circular chuck for fixing the fan-shaped blocs is disposed on the outer edge of the polishing disk.

The invention provides a method for anhydrous polishing of KDP crystals. High-precision and high-efficiency polishing of a KDP crystal material is realized. The anhydrous polishing process is dividedinto rough polishing and fine polishing, and a anhydrous polishing solution comprises methyl oleate, silicon carbide/aluminum oxide mixed abrasive particles and anhydrous sodium carbonate and is divided into an anhydrous rough polishing solution and an anhydrous fine polishing solution; and the difference between the anhydrous rough polishing solution and the anhydrous fine polishing solution is embodied in the viscosity of methyl oleate, the ratio, particle size and concentration of silicon carbide/aluminum oxide mixed abrasive particles, and the particle size and concentration of anhydrous sodium carbonate. Compared with other KDP crystal polishing methods, the method for anhydrous polishing of the KDP crystals has the advantages that a polishing liquid chemical reagent used in the method is non-toxic, low in harm and environmentally friendly, the phenomenon that the KDP crystals are deliquesced in contact with water to be damaged is effectively avoided in the polishing process, andthe processing quality of the surfaces of the KDP crystals is effectively improved.

Provided is a method that is for joining a conveyor belt having as a core layer a steel cord and that can increase the quality of the join and reduce the joining work time for the ends in the lengthwise direction of the belt. The core layer (1a) is formed in a manner so as to be exposed ahead of time at the ends (1A) in the lengthwise direction of the belt main body (1), the top of the core layer (1a) is covered by a peeling member (5), and a cover rubber (3a, 3b) is laminated to the top of the peeling member (5), in which state the belt main body (1) is vulcanized/molded; the peeling member (5) is peeled, eliminating the cover rubber (3a, 3b) laminated onto the peeling member (5) and exposing the core layer (1a); the steel cord (1b) of the core layer (1a) to which to join to is inserted into the steel cord (1b) that is of the exposed core layer (1a) and of which alternate strands in the belt width direction have been severed to a predetermined length; and after laminating a cushion rubber (2) and a cover rubber (3a, 3b), the result is vulcanized, thus joining the core layers (1a) to each other.

Provided are a hydrogen ion electrode composed of a composite material of polymer resin and nano iridium oxide, the composite material containing 1-10 nm sized nano iridium oxide particles and/or aggregates thereof which are dispersed to be electrically connected to each other in a moldable, thermoplastic, and hydrophobic polymer resin matrix; a pH sensor using the same; and a method for manufacturing the same. The surface of the hydrogen ion electrode shows very fast pH sensitivity when exposed to a sample solution, and the pH sensitivity is approximate to biphasic characteristics. Furthermore, regardless of high reproducibility of pH sensitivity, abrupt pH change, and repetitive use, very low hysteresis, durability due to high physical strength, and high surface regeneration due to polishing are exhibited, and thus, the lifetime of the electrode can be extended and various sizes and shapes of electrodes can be easily manufactured.

The invention discloses a wafer polishing device and method. The wafer polishing device comprises a polishing carrier and a thickness-adjustable polishing gasket, the polishing carrier comprises a polishing carrier groove, in the wafer polishing process, the thickness-adjustable polishing gasket is arranged in the polishing carrier groove, and a wafer is arranged on the thickness-adjustable polishing gasket; the groove depth h1 of the polishing carrier groove, the thickness h2 of the thickness-adjustable polishing gasket and the thickness h3 of the wafer meet the formula that h2+h3>h1. The wafer polishing device has the advantages that the service life of the wafer polishing device is prolonged, the flatness of the wafer can be improved, and the polishing process is simple and easy to implement.

The invention discloses a preparation method of a diamond reinforced silicon carbide (SiC) composite wafer, and belongs to the field of semiconductor material preparation. The method comprises the following steps: plating a 5-20nm SiNx thin layer on a SiC carbon polar surface subjected to vacuum heat treatment at 800-1000 DEG C; and after microwave hydrogen plasma treatment is carried out for 1-5 min, methane with the hydrogen flow proportion being 5-10% is introduced, the operation lasts for 5-15 min, and diamond high-density nucleation and C-Si bond formation are achieved based on nitrogen atom escape and carbon atom permeation. And then, silane with the hydrogen flow proportion being 0.1-1% is introduced while methane is reduced to 3%-5% for growing diamond, the silane flow is slowly reduced within 10-30 min till closing, and the SiC/diamond composite gradient transition layer is deposited. And then repeating the circulation process of introducing nitrogen with the hydrogen flow proportion of 1-5% every 5-20 min in diamond growth and keeping for 1-5 min, closing the nitrogen and methane after the diamond reaches a certain thickness, slowly cooling to 600 DEG C or below in hydrogen plasma, then raising the temperature to 800-1000 DEG C, treating for 0.5-5 h, and slowly cooling, and finally, the diamond/SiC composite wafer material with low stress and strong combination is realized by polishing the diamond surface.

The invention relates to a multilayer polishing glue and a preparation method and an application thereof. The multilayer polishing glue at least comprises a surface-layer polishing glue, a middle-layer polishing glue and an inner-layer polishing glue which are sequentially arranged, wherein the surface-layer polishing glue, the middle-layer polishing glue and the inner-layer polishing glue all comprise asphalt and polishing powder; and , from the surface-layer polishing glue to the inner-layer polishing glue, the penetration of the asphalt is kept unchanged or gradually increased, and the grain diameters of the polishing powder are sequentially reduced. According to the multilayer polishing glue, the technical difficulty that the surface roughness, surface defects and the surface precisionof soft and brittle infrared material, especially chalcogenide glass are difficult to converge at the same time in the precise polishing process is overcome, and accurate control of various machiningquality parameters in the batch precision polishing process is realized.

The invention discloses a silicon wafer polishing manufacture procedure method, which comprises the following steps of: S1) pre-cleaning; S2) pasting; S3) roughly polishing; S4) moderately polishing; S5) finely polishing; S6) peeling; and S7) dewaxing and cleaning, wherein the steps of roughly polishing, moderately polishing and finely polishing respectively comprise the following steps of: S1.1) carrying out pre-pressure reduction water polishing; S1.2) pressurizing, and polishing grinding fluid; and S1.3) carrying out post-pressure reduction water polishing; and a step of polishing a pressure reduction surfactant is added after the steps of post-pressure reduction water polishing in the steps of roughly polishing and finely polishing. According to the silicon wafer polishing manufacture procedure method disclosed by the invention, the polishing manufacture procedure is simplified, the input of fixed assets is effectively lowered, and the phenomenon of ''rime fog'' on the wafer surface is effectively eliminated by adding the step of ''polishing the pressure reduction surfactant''. After the wafer is peeled by high-quality flowing pure water, according to the short-period storage of the wafer, the particle problem is alleviated, the operations of replacing and preparing the solution are omitted, the operation burden is lightened, and the manufacture procedure percent of pass is improved.

The invention discloses an aluminum oxide polishing solution for polishing mother pearl shellfish and a preparation method of the aluminum oxide polishing solution, and belongs to the technical field of grinding and polishing. The aluminum oxide polishing solution is prepared from the following raw materials in parts by weight: 15 to 30 parts of plate-shaped aluminum oxide powder, 0.5 to 10 parts of sphere-like aluminum oxide powder, 0.3 to 1.0 part of a dispersing agent, 0.2 to 10 parts of a suspending agent, 0.1 to 1 part of a pH regulator and 50 to 80 parts of water. The aluminum oxide powder adopted by the invention is plate-shaped aluminum oxide powder and sphere-like aluminum oxide powder, and the adopted suspending agent is BYK LAPONITER-RDS sol-level flaky silicate. The aluminum oxide polishing solution adopted by the invention has better dispersity, uniformity and suspension property; and when the prepared polishing solution is used for polishing mother pearl shellfish, the grinding step and the polishing step can be combined into a whole, the processing flow is simplified, and the high removal rate, the low surface roughness and the perfect surface state can be achieved.

The invention provides a glass forming mold and a glass forming method. The glass forming mold comprises a shaping mold and a pressing mold which are matched for use; the shaping mold is provided with a shaping groove, and the bottom of the shaping groove is provided with a groove bottom plane area and a groove bottom curved surface area extending outwards in the groove opening direction along the edge of the groove bottom plane area; a pressing mold is provided with a shaping convex block, the top of the shaping convex block is provided with a convex block plane area and a convex block curved surface area, the convex block plane area is matched with the groove bottom plane area, the convex block curved surface area is matched with the groove bottom curved surface area, and when the shaping mold is matched with the pressing mold for use, the shaping convex block extends into the shaping groove; and the distance d1 between the groove bottom plane area and the protruding block plane area is 90%-99% of the thickness d of the plate glass to be processed, and the distance d2 between the groove bottom curved surface area and the protruding block curved surface area is larger than d. By adopting the glass forming mold, the subsequent processing and preparation time of the curved glass prepared by the glass forming mold can be remarkably shortened.

The invention discloses a device for removing sprues of an automobile brake pedal assembly. The device comprises an upper fixing plate, punching knives, a lower fixing plate and a positioning die, wherein the upper fixing plate is connected to a retractable device, the punching knives are used for cutting off the sprues of the automobile brake pedal assembly and are connected to the upper fixing plate, the positioning die is arranged on the lower fixing plate, and a profiling surface used for positioning the automobile brake pedal assembly is arranged on the positioning die. According to the device, the automobile brake pedal assembly is placed on the positioning die, then the retractable device is started to enable the upper fixing plate to move downwards, the punching knives move downwards along with the upper fixing plate to cut off the sprues on the automobile brake pedal assembly, and then only fine polishing needs to be carried out on the automobile brake pedal assembly. The device has the advantages that the sprues can be automatically punched and cut, the polishing procedure is simplified, and therefore the labor intensity of workers can be reduced, the production efficiency can be improved, and the cost of products can be reduced; and in addition, punching pins can be additionally arranged to be used for punching burrs inside assembling holes.

According to the non-load overall immersion type chemical mechanical coupling surface polishing method for the gear, the gear is integrally immersed during polishing, no external load is applied, ultrasonic assistance is applied, chemical and mechanical coupling and fluid and solid coupling are achieved, and the surface of the gear is efficiently and stably polished. The self-developed green and environment-friendly polishing solution mainly comprises deionized water, silicon carbide abrasive particles, hydrogen peroxide, phosphoric acid and malic acid. Compared with other surface treatment methods for gear parts, the method has the advantages that the gear can be comprehensively polished, an external load is not independently applied in the polishing process, the defects such as scratches and subsurface damage generated in the polishing process are effectively reduced, and the polished gear surface including a curved tooth profile can meet the smooth requirement. In addition, the developed polishing solution does not contain chemical reagents such as strong acid or strong alkali which are harmful to human bodies or the environment, and is green and environment-friendly.

The invention relates to the technical field of production equipment, and discloses a rough-wrought workpiece polishing device for mold production. The rough-wrought workpiece polishing device comprises a device base, wherein the top end of the device base is fixedly connected with a lifting frame, the top end of the lifting frame is movably connected with a moving frame, the middle of the movingframe is movably connected with a moving block, the bottom end of the moving block is fixedly provided with a sand disc, the top end of the moving block is fixedly provided with an air pump, an air passage is formed in the sand disc, air blowing openings are formed in the two sides of the bottom end of the sand disc, and a buffer spring is fixedly arranged in the middle of the device base. According to the rough-wrought workpiece polishing device, the air blowing openings are formed in the two sides of the sand disc and are connected with the air pump through the air passage, so that the polishing device is used for continuously blowing air to the surface of the polishing surface by utilizing the air pump when polishing work is carried out, fine sand grains or other impurities on the surface of a polishing piece are cleaned, the cleaning work when the sand disc is replaced during each polishing is replaced, the polishing process is simplified, and the polishing efficiency is improved.