The invention discloses a pixel unit of a
CMOS image sensor and a manufacturing method of the pixel unit and belongs to the technical field of semiconductors. The pixel unit comprises a photosensitive
diode and a pass
transistor set. The pass
transistor set comprises a plurality of pass transistors which are connected at the source
electrode end and the drain
electrode end in parallel respectively. The grid
electrode of each pass
transistor and an injection area of the photosensitive
diode form an overlapping are, wherein the overlapping areas are different in size, so that different transmission efficiencies are achieved. The photosensitive
diode is used for conducting photovoltaic conversion so that a
photon can be converted into an
electron. The pass transistor set is used for achieving the purpose that the pass transistor corresponding to the transmission efficiency is selectively started according to the
illuminance of incident light, so that
electron transmission is conducted, and therefore the
electron is transmitted to the drain electrode end from the source electrode of the pass transistor set and converted into a
voltage signal. According to the pixel unit of the
CMOS image sensor, the pass transistor, corresponding to the transmission efficiency, of the pass transistor set is selectively started according to the
illuminance of incident light, so that
electron transmission is conducted, and therefore the index of high sensitivity and the index of high dynamic are achieved.