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117 results about "Photon conversion" patented technology

Optical sampling using intermediate second harmonic frequency generation

An optical sampling method and apparatus use a probe pulse source of a predetermined optical wavelength range, e.g., 1560 nm, to sample incoming optical pulses in approximately the same wavelength range. The probe pulse source is frequency-doubled e.g., using a frequency doubler such as a nonlinear PPLN crystal, to obtain an intermediate second harmonic which may be filtered with a 780 nm bandpass filter to eliminate at least source frequency noise background. The filtered intermediate second harmonic is then mixed with the user input signal using an optional polarizing beam splitter and a dichroic beam splitter. The mixed signal is sent to a sum frequency generating (SFG) nonlinear crystal, e.g., a PPLN crystal, where the resulting frequency is near the third harmonic. The output from the SFG PPLN crystal may be filtered using a bandpass 515 nm filter to remove unwanted wavelengths and processed to measure/sense the near third harmonic content using a photomultiplier tube (PMT). Beyond the PMT, the output may be sent to a microprocessor for analysis and display on a cathode ray oscilloscope as necessary. 80-85% power conversion efficiency in the frequency doubler, a 60 or 65% photon conversion efficiency in the sampler and handling of 600+ GHz bandwidths, as well as background noise reduction are possible by using the invention.
Owner:AGILENT TECH INC

Light conversion enhanced photocatalysis composite material and preparation method thereof

ActiveCN102064209AHigh Photon Conversion EfficiencyEnhanced Response Spectral IntensityEnergy inputHydrogen productionSolar lightDecomposition
The invention provides a light conversion enhanced photocatalysis composite material and a preparation method thereof. The light conversion enhanced photocatalysis composite material is prepared according to the main principle that: a photocatalysis film layer is further compounded on the surface of a transparent infrared conversion core layer by adopting a physical-chemical method, the photocatalysis response spectral intensity of the photocatalysis material is remarkably enhanced by utilizing the control function of a transparent infrared conversion light film layer to the solar incident light spectrum energy distribution and an efficiency coupling energy transfer function between the transparent infrared conversion light film layer and the photocatalysis film layer, and the photon conversion efficiency and the solar utilization efficiency of the photocatalysis material are improved. The novel light conversion enhanced photocatalysis composite material has the advantages of compact structure, stable property, high photon conversion efficiency and the like, can adapt to different solar illumination conditions, can be used for fully converting and utilizing solar energy, and has potential application to the fields of direct catalysis decomposition on pure water to produce hydrogen by solar light, photocatalytic degradation to organic pollutants, organism photosynthesis and thelike.
Owner:NANJING UNIV OF TECH

Frame-shuttered CMOS image sensor with simultaneous array readout

A frame shuttered CMOS image sensor with simultaneous array readout. An array of CMOS pixels are printed on a silicon substrate. Within each pixel is a light sensitive region comprising a photo sensitive diode for converting photons into electrical charge and at least three transistors to permit reading of reset electrical charges and collected electrical charges and for re-setting the photosensitive diode. The sensor includes an array of signal and re-set readout capacitors located on the substrate but outside of the pixel array. Metal conductors printed in said substrate connect each pixel in said pixel array with a signal capacitor and a re-set capacitor in array of signal and re-set readout capacitors. Transistor switches printed in said substrate but outside of said pixel array are used to isolate the signal and re-set capacitors from each other and from the pixels. Control circuitry is provided for re-setting simultaneously each of the pixels in the pixel array, for collecting simultaneously re-set signals from each pixel on to one of the reset capacitors in the array of readout capacitors and for collecting simultaneously integrated pixel signals from each pixel on to one of the signal capacitors in the array of readout capacitors. Readout circuitry is provided for reading charges collected on the array of signal and re-set capacitors.
Owner:FORZA SILICON

Pixel unit of CMOS image sensor

The invention discloses a pixel unit of a CMOS image sensor and a manufacturing method of the pixel unit and belongs to the technical field of semiconductors. The pixel unit comprises a photosensitive diode and a pass transistor set. The pass transistor set comprises a plurality of pass transistors which are connected at the source electrode end and the drain electrode end in parallel respectively. The grid electrode of each pass transistor and an injection area of the photosensitive diode form an overlapping are, wherein the overlapping areas are different in size, so that different transmission efficiencies are achieved. The photosensitive diode is used for conducting photovoltaic conversion so that a photon can be converted into an electron. The pass transistor set is used for achieving the purpose that the pass transistor corresponding to the transmission efficiency is selectively started according to the illuminance of incident light, so that electron transmission is conducted, and therefore the electron is transmitted to the drain electrode end from the source electrode of the pass transistor set and converted into a voltage signal. According to the pixel unit of the CMOS image sensor, the pass transistor, corresponding to the transmission efficiency, of the pass transistor set is selectively started according to the illuminance of incident light, so that electron transmission is conducted, and therefore the index of high sensitivity and the index of high dynamic are achieved.
Owner:SHANGHAI INTEGRATED CIRCUIT RES & DEV CENT

Positron imaging method and system of dual-readout PET detector

The invention discloses a positron imaging method and system of a dual-readout PET detector. According to the system, photoelectric devices are arranged at two ends of crystal bar for coupling and areused for acquiring optical signal data in the crystal to carry out scintillation pulse data coupling; measured amplitude height of the pulse and arrival time of the pulse in the photoelectric devicesare recorded; and a difference value of the pulse arrival time and the amplitude height of the pulse are calculated and the position of the deposition energy of the gamma photon in the crystal is estimated. In addition, the method comprises the following steps: digitalizing a scintillation pulse coupling signal acquired by a photoelectric detector through an analog-to-digital converter; calculating the position of a photon conversion interaction depth according to the ratio of signal amplitudes at two ends of the detector; and performing interaction effect depth information reconstruction according to the energy, time and position information of the obtained signal. According to the invention, the action depth of the photon in the crystal is accurately located and action depth informationis obtained; parallax error correction is carried out; the interaction depth effect is effectively reduced; and the PET imaging effect is improved.
Owner:南昌华亮光电有限责任公司
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