The present invention relates to a
semiconductor structure and a preparation method thereof, wherein the
semiconductor structure comprises a substrate and a
source structure, a gate structure, a protection structure, a
discharge structure and a
cutting path located on the substrate; the gate structure surrounds the
source structure; the gate structure has a convex portion on one side facing the
source structure; the protection structure surrounds the gate structure; the
discharge structure surrounds the protection structure; the
discharge structure comprises a connection layer, which is connected to the convex portion; and the
cutting path surrounds the discharge structure. The discharge structure comprises a connection layer, which is connected to the convex portion, thereby forming a discharge loop, which does not occupy too much area of the structure, thereby eliminating the
antenna effect of the gate structure during the preparation of the
semiconductor structure. When the
semiconductor structure is tested, it is only necessary to apply a
voltage to the gate structure. Since the
diode formed by the discharge structure is forward-conducted, the discharge structure is blown, and the discharge loop is
cut off, thereby ensuring that the subsequent
semiconductor structure can be tested normally.