1results about How to "Long fast" patented technology

The application discloses a single-chip vapor deposition device and system, which comprises a base, an at least partially liftable baffle arranged around the base and surrounding a process chamber during a film forming process, a process gas inlet mechanism arranged on one side of the process chamber for supplying process gas, an exhaust port arranged in the process chamber, the exhaust port and the process gas inlet mechanism being arranged on opposite sides of the single-chip vapor deposition device, a wafer transfer port arranged on a side of the single-chip vapor deposition device different from the side where the process gas inlet mechanism and the exhaust port are arranged, and the baffle being provided with a first opening only on a side close to the process gas inlet mechanism, process gas flowing into the process chamber through the first opening, flowing horizontally on the surface of a substrate and epitaxially forming a film, and at least part of process gas not participating in a reaction and reaction byproducts being discharged from the exhaust port. The application can reduce the long velocity difference of process gas at the front and back of a substrate, so as to improve the crystal quality and film thickness uniformity of an epitaxial layer.