9 results about "Photon upconversion" patented technology

Provided are a photon up-conversion film, a photon up-conversion body, a laminate, and an energy conversion device, which are capable of high-efficiency up-conversion, and methods of producing the same. The photon up-conversion film according to an embodiment of the present invention includes a color-forming portion containing at least: a sensitizing component capable of absorbing light in a first wavelength region λ1; and a light-emitting component capable of radiating light in a second wavelength region λ2 including wavelengths shorter than those of the first wavelength region λ1. A relaxation time of the photon up-conversion film measured by a spin-echo method through use of time-domain nuclear magnetic resonance (pulse NMR) at 298 K is less than 210 ms.

Provided are a photonic up-conversion film, a photonic up-conversion body, a laminate, and an energy conversion device capable of high-efficiency up-conversion, and a method for manufacturing the same. The photonic up-conversion film of an embodiment of the present application has a color development portion that contains at least a sensitizing component capable of absorbing light in a first wavelength range λ1 and a luminescent component capable of emitting light in a second wavelength range λ2 shorter in wavelength than the first wavelength range λ1. With respect to the photonic up-conversion film, the relaxation time measured by the spin echo method using the time-domain nuclear magnetic resonance method (pulse NMR) at 298 K is less than 210 ms.

An upconversion film or device includes a dielectric layer, a gap electrode layer overlying the dielectric layer, and an upconversion material configured to upconvert infrared light to visible light. The gap electrode layer includes an array of discrete apertures between an array of discrete electrodes and a continuous electrode. Each discrete aperture is defined by a capacitive gap at least partially filled by the upconversion material, An example upconversion film includes capacitive gaps that are each less than nanometers. An example upconversion device includes an optically transparent electrode layer underlying the dielectric layer. An example infrared camera includes an imaging layer that includes an array of sensing elements, in which each discrete aperture is aligned with a sensing element. An example method of manufacturing an upconversion film includes forming a passivation layer on the array of discrete electrodes using atomic layer deposition to form the capacitive gap.

To provide a photon upconversion material that is practical and can be applied to solid films. [Solution] The photon upconversion material of the present invention is an acceptor compound having a π-conjugated condensed polycyclic structure containing at least one aromatic ring unit (where, one of the aromatic ring units is bonded to a group having a chain length of 4 atoms or more, such as sp 3 The compound comprises a carbon atom, a silicon atom bonded to a group having a chain length of 4 or more atoms, a nitrogen atom bonded to a group having a chain length of 4 or more atoms, or a boron atom bonded to a group having a chain length of 4 or more atoms, and a donor compound that imparts triplet energy to the acceptor compound.

The present invention addresses the problem of providing: a curing method for a photocurable resin composition under atmospheric conditions by using a photon up-conversion mechanism, which achieves both surface curability and curability in deep portions of the photocurable resin composition; a bonding, sealing, and coating method using the curing method; and a cured product thereof.　Provided are: a curing method for a photocurable resin composition, the method including a step for simultaneously or sequentially irradiating a photocurable resin composition that contains a polymerizable compound with light having a wavelength of 500 nm or less and light having a wavelength of more than 500 nm, and polymerizing the polymerizable compound using at least a photon up-conversion mechanism under atmospheric conditions; a bonding, sealing, and coating method using the curing method; and a cured product thereof.

The present invention addresses the problem of providing: a photocurable resin composition that is cured only by light irradiation and does not require full curing by heat; an adhesive, a sealant or a coating agent containing the photocurable resin composition; a cured product thereof; a semiconductor device or an electronic component containing the cured product; and a curing method, a bonding method, a sealing method, and a coating method using the photocurable resin composition.　Provided are: a photocurable resin composition containing (A) a maleimide compound, and (B) a photon upconversion material; an adhesive, a sealant, or a coating agent containing the photocurable resin composition; a cured product thereof; a semiconductor device or an electronic component containing the cured product; and a curing method, a bonding method, a sealing method, and a coating method using the photocurable resin composition.

The invention relates to the technical field of organic photoelectric functional materials, in particular to a photon up-conversion material based on a metal-free photosensitizer and a covalent organic framework and a preparation method of the photon up-conversion material. The up-conversion material comprises a cyanine dye photosensitizer and a covalent organic framework, the cyanine dye photosensitizer is assembled on the surface of the covalent organic framework through a molecular anchor in the structural formula of the cyanine dye photosensitizer, and the photon up-conversion material based on the metal-free photosensitizer and the covalent organic framework is formed. According to the invention, through combination of a molecular anchor and a crystal engineering strategy, two core problems of interface transfer and bulk phase diffusion of excitons in solid TTA-UC are cooperatively overcome, and a brand new thought and an effective solution are provided for development of a high-performance solid upconversion material. According to the preparation method, the metal-free photosensitizer and the organic framework material are adopted, precious metal and heavy metal quantum dots are prevented from being used, better biocompatibility and environment friendliness are achieved, meanwhile, the preparation cost is reduced, and large-scale production is facilitated.

This photon upconversion composition including a naphthalene compound obtained by substitution with a substituent including at least one selected from a group consisting of an alkynyl group, a substituted silyl group, a benzene ring, a heterocyclic aromatic ring, a cyano group, and a halogen atom, is capable of efficiently converting excitation light into ultraviolet light at a low excitation intensity.

The application discloses an infrared light spot detection device, method and system, and belongs to the fields of optoelectronic detection, organic semiconductor devices and computer vision technology. The detection device is an up-conversion device with an organic thin film cascade structure, and is sequentially provided with an ITO transparent anode, an electron transport / hole blocking layer, an infrared photosensitive layer, an interconnection layer / electron blocking layer, a light-emitting layer, an electron transport layer, an electron injection layer and a cathode from top to bottom, and is packaged with an 8V-9V power supply module and a glass-glass ultraviolet curing adhesive sealing structure. The detection method irradiates the up-conversion device with infrared light spots, forms visible light intensity distribution through photon up-conversion, captures an image through a mobile terminal CMOS sensor, and then completes decoding, correction and quantization through an APP. The light spot area and power density are calculated based on the linear proportional relationship of a preset standard reference. The detection system is composed of the above device and the mobile terminal APP, realizes high-sensitivity detection of near-infrared and short-wave infrared band light spots, and can perform quantitative analysis on infrared light spots.