The invention relates to a method used for growth of 
transition metal chalcogenide crystals via 
metal fluxing agent method. The method comprises following steps: (1) elementary 
substance M, elementary substance X, and elementary substance Sn are mixed, an obtained mixture is heated to 1100 to 1150 DEG C at a vacuum degree of 1*10<-3> to 1*10<-4>Pa, and thermal prevention is carried out for 20 to 40h, wherein M is used for representing Cr, Mo, or W, and X is used for representing S, Se, or Te; and (2) the mixture is subjected to first stage temperature reducing at a temperature reducing speed of 1-6 DEG C / h so as to realize 
crystal spontaneous 
crystallization, when the temperature is reduced to 900 to 1000 DEG C, thermal preservation is carried out for 20 to 40h, 
quenching is carried out, and an obtained product is cooled to 
room temperature in 5 to 10min so as to obtain the 
transition metal chalcogenide crystals. Operation conditions of the method are easy to realize, and controllable; raw materials are easily available, and are cheap; the obtained 
transition metal chalcogenide crystals are high in quality; and application prospect in the fields of 
photon, photoelectric, and electronic devices is promising.