The invention belongs to the technical field of electronic-grade
trimethylsilane, and particularly relates to a purification method and application of electronic-grade
trimethylsilane. Comprising the following steps that S1, a
trimethylsilane raw material and
diluent gas are mixed and introduced into an adsorption
tower, components with the
boiling point similar to that of trimethylsilane are removed, a trimethylsilane crude product is obtained, and filler of the adsorption
tower is a mixture of
activated carbon and
metal oxide; and S2, introducing the trimethylsilane crude product into a light component removal
tower to remove light components, and then introducing the trimethylsilane crude product into a heavy component removal tower to remove heavy components so as to obtain the electronic-grade trimethylsilane.
Impurity components such as
dimethylsilane in the trimethylsilane
raw material, which are similar to the
boiling point of the trimethylsilane, are reduced in the content of the components such as the
dimethylsilane through the adsorption tower. Diluting gas is added before the trimethylsilane
raw material is introduced into the adsorption tower, so that the heat release effect during adsorption is reduced, and
disproportionation reaction is avoided. Meanwhile, the added
metal oxide in the filler has a synergistic effect with the diluted gas, so that the adsorption heat release is reduced.