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45results about How to "Large amount of heat" patented technology

Intrinsic thermal enhancement for FBGA package

A semiconductor device for dissipating heat generated by a die during operation and having a low height profile, a semiconductor die package incorporating the device, and methods of fabricating the device and package are provided. In one embodiment, the semiconductor device comprises a thick thermally conductive plane (e.g., copper plane) mounted on a thin support substrate and interfaced with a die. Thermally conductive via interconnects extending through the substrate conduct heat generated by the die from the conductive plane to conductive balls mounted on traces on the opposing side of the substrate. In another embodiment, the semiconductor devices comprises a thick thermally conductive plane (e.g., copper foil) sandwiched between insulative layers, with signal planes (e.g., traces, bonding pads) disposed on the insulative layers, a die mounted on a first signal plane, and solder balls mounted on bonding pads of a second signal plane. A thermally conductive via interconnect extends through the substrate to provide a thermal path from the die and signal plane (traces) through the thick conductive plane and into the solder balls and external device (e.g., mother board). The present semiconductor device provides effective heat dissipation without the attachment of an external heat sink or spreader.
Owner:MICRON TECH INC

Intrinsic thermal enhancement for FBGA package

A semiconductor device for dissipating heat generated by a die during operation and having a low height profile, a semiconductor die package incorporating the device, and methods of fabricating the device and package are provided. In one embodiment, the semiconductor device comprises a thick thermally conductive plane (e.g., copper plane) mounted on a thin support substrate and interfaced with a die. Thermally conductive via interconnects extending through the substrate conduct heat generated by the die from the conductive plane to conductive balls mounted on traces on the opposing side of the substrate. In another embodiment, the semiconductor devices comprises a thick thermally conductive plane (e.g., copper foil) sandwiched between insulative layers, with signal planes (e.g., traces, bonding pads) disposed on the insulative layers, a die mounted on a first signal plane, and solder balls mounted on bonding pads of a second signal plane. A thermally conductive via interconnect extends through the substrate to provide a thermal path from the die and signal plane (traces) through the thick conductive plane and into the solder balls and external device (e.g., mother board). The present semiconductor device provides effective heat dissipation without the attachment of an external heat sink or spreader.
Owner:MICRON TECH INC

Broadband Power Amplifier with A High Power Feedback Structure

InactiveUS20090231042A1High power feedback structureLarge optimum load impedanceSemiconductor/solid-state device detailsSolid-state devicesBroadband power amplifierPower over
A broadband power amplifier using a novel high power feedback structure is disclosed in this patent. Feedback is widely used in amplifier design to broaden the bandwidth of the amplifier. Traditionally, the feedback resistor is either an axial resistor placed over the top of the transistor or a surface mount resistor with a long PCB trace making up the rest of the feedback path. However, each of these methods has it's limitations. The axial resistor doesn't have good heat sinking capability and therefore cannot handle high power. The feedback on PCB makes the feedback path long and becomes positive feedback at high frequency, thus limiting the high end frequency of operation of the amplifier in a stable region. The feedback structure disclosed in this patent has a good heat sinking path, has very short feedback path; allowing for higher frequency operation. We successfully applied the feedback structures to a Gallium Nitride (GaN) transistor, which is a new type of power transistor that has low parasitic capacitance and high optimum load impedance, and demonstrated an amplifier with very high output power over extraordinarily broad bandwidth. Matching networks have been optimized to improve performance and stability. We have demonstrated that unconditional stability is achievable while operating over a broad bandwidth using this feedback structure.
Owner:JIA PENGCHENG +1
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