39results about "Metal surface removal provision" patented technology

In a capacitor device of the present invention includes a substrate, a plurality of lower electrodes formed on the substrate, a plurality of dielectric films formed on a plurality of lower electrodes respectively in a state that the dielectric films are separated mutually, and upper electrodes formed on a plurality of dielectric films respectively, a plurality of capacitors each composed of the lower electrode, the dielectric film, and the upper electrode are arranged on the substrate respectively, and each of the dielectric films in a plurality of capacitors has a different film thickness.

A method of adjustment in the manufacture of a capacitance of a capacitor supported by a substrate, the method including the steps of: a) forming a first electrode parallel to the surface of the substrate and covering it with a dielectric layer; b) forming, on a first portion of the dielectric layer, a second electrode; c) measuring the capacitance between the first electrode and the second electrode, and deducing therefrom the capacitance to be added to obtain the desired capacitance; d) thinning down a second portion of the dielectric layer, which is not covered by the second electrode, so that the thickness of this second portion is adapted to the forming of the deduced capacitance; and e) forming a third electrode on the thinned-down portion and connecting it to the second electrode.

A method of adjustment during manufacture of a capacitance of a capacitor supported by a substrate, the method including the steps of: a) forming a first electrode parallel to the surface of the substrate and covering it with a dielectric layer; b) forming, on a first portion of the dielectric layer, a second electrode; c) measuring the electrical signal between the first electrode and the second electrode, and deducing therefrom the capacitance to be added to obtain the desired capacitance; d) thinning down a second portion of the dielectric layer, which is not covered by the second electrode, so that the thickness of this second portion is adapted to the forming of the deduced capacitance; and e) forming a third electrode on the thinned-down portion and connecting it to the second electrode.

The present invention relates to a method for producing microcarriers comprising the following steps: (a) providing a wafer (6) having a sandwich structure comprising a bottom layer (7), a top layer (8) and a insulating layer (9) located between said bottom and top layers (7, 8), (b) etching away the top layer (8) to delineate lateral walls (12) of bodies (11) of the microcarriers, (c) depositing a first active layer (13) at least on a top surface (14) of the bodies (11), (d) applying a continuous polymer layer (16) over the first active layer (13), (e) etching away the bottom layer (7) and the insulating layer (9), (f) removing the polymer layer (16) to release the microcarriers.

The invention discloses a formation method capable of reducing the leak current in medium and high voltage formed foils. The method herein includes the following steps: immersing an aluminum foil in water, then immersing the aluminum foil in an azelate solution, performing first level formation, then performing first level rinsing, then placing the aluminum foil in the azelate solution, perform second level formation, and second level formation, placing the aluminum foil in the azelate solution, performing third level formation, immersing the aluminum foil which undergoes formation through the third level formation to a 3, 5 dihydroxy-benzoic acid solution, performing high-temperature heat treatment, placing the aluminum foil which undergoes the high temperature treatment in a boric acid and strontium phosphate solution, performing fourth level formation, performing high temperature heat treatment, finally placing the aluminum foil in a boric acid and strontium phosphate solution and performing fifth level formation, then immersing the aluminum foil in a phosphoric acid solution, taking out the aluminum foil, rinsing the aluminum foil, and drying the aluminum foil. According to the invention, the method herein allows products to have explicit reduction of leak current, and since the intensity of the formed current has doubled, the time for formation reduced by half, and seven formation steps has reduced to five, production efficiency has doubled.

An aluminum gel reverse analysis method for increasing the specific volume of formed foil includes the steps: roasting etched foil at the high temperature of 460-580 DEG C for 10-30min, taking out the foil and repeatedly forming the foil in a forming agent for 1-3 times by 0.05-0.10A / cm<2> for 10-30min to obtain a forming agent containing aluminum gel; and placing the etched foil in the forming agent containing the aluminum gel, forming the foil according to a conventional three-stage forming method and increasing the specific volume of the formed foil by 1-15%.

The invention discloses a method for improving specific volume of a low pressure corrosion aluminum foil. The method comprises steps that (1), the aluminum foil is immersed in aqueous phosphoric acidsolution and washed with the water; (2), the treated aluminum foil is subjected to cloth hole etching in the aqueous solution containing hydrochloric acid, sulfuric acid, aluminum trichloride and an emulsion type polyether-siloxane copolymer silicone foam breaker and washed with the water; (3), the treated aluminum foil is subjected to medium treatment in the aqueous solution of hydrogen phosphateor dihydrogen phosphate and washed with the water; (4), the treated aluminum foil is then subjected to deep growth etching in the aqueous solution containing hydrochloric acid, sulfuric acid, aluminum trichloride and an emulsion type polyether-siloxane copolymer silicone foam breaker and washed with the water; (5), the steps (3) and step (4) are repeated for 3-6 times; (6), the treated aluminum foil is then immersed in the aqueous solution of sulfuric acid and washed with the water, the washed aluminum foil is then immersed in the triethanolamine solution and washed with the water; and (7), the aluminum foil is dried. The method is advantaged in that the specific volume of the low pressure corrosion aluminum foil can be improved.

The invention discloses a chemical conversion treatment method for improving the water resistance of low-pressure chemical formed foil, which comprises dipping the aluminum foil in an aqueous solution of adipate, taking it out and placing it in an aqueous solution of ammonium adipate and adipate, and then Formation, take out and wash with water, then conduct high-temperature heat treatment, then place in the mixed aqueous solution of ammonium adipate and dihydrogen phosphate, perform secondary formation, take out and wash with water, and then treat in phosphoric acid solution at high temperature, then perform high-temperature heat treatment and water washing, Finally, put it in the dihydrogen phosphate aqueous solution, take it out after the tertiary formation, wash it with water, and dry it. The invention has the advantages of obviously improving the water resistance of the product, prolonging the storage time and improving the performance of the capacitor.