73results about How to "Absorption coefficient" patented technology

A method for depositing an amorphous carbon layer on a substrate includes the steps of positioning a substrate in a chamber, introducing a hydrocarbon source into the processing chamber, introducing a heavy noble gas into the processing chamber, and generating a plasma in the processing chamber. The heavy noble gas is selected from the group consisting of argon, krypton, xenon, and combinations thereof and the molar flow rate of the noble gas is greater than the molar flow rate of the hydrocarbon source. A post-deposition termination step may be included, wherein the flow of the hydrocarbon source and the noble gas is stopped and a plasma is maintained in the chamber for a period of time to remove particles therefrom.

A method for depositing an amorphous carbon layer on a substrate includes the steps of positioning a substrate in a chamber, introducing a hydrocarbon source into the processing chamber, introducing a heavy noble gas into the processing chamber, and generating a plasma in the processing chamber. The heavy noble gas is selected from the group consisting of argon, krypton, xenon, and combinations thereof and the molar flow rate of the noble gas is greater than the molar flow rate of the hydrocarbon source. A post-deposition termination step may be included, wherein the flow of the hydrocarbon source and the noble gas is stopped and a plasma is maintained in the chamber for a period of time to remove particles therefrom.

Exemplary method and apparatus can be provided for directing a substance and electromagnetic radiation to a particular location in a biological tissue, for example, to inject and cure a cosmetic filler in situ. The apparatus can include a needle configured to be inserted into the tissue, and a waveguide configured to direct the electromagnetic radiation, such as optical energy, to a location proximal to the needle tip. The substance can be injected into the tissue through the needle and irradiated by the optical energy. In addition, the exemplary method and apparatus can be provided for determining the location of the needle tip in a biological tissue based on characteristics of light directed through the waveguide and emitted proximal to the needle tip. For example, intensity of the emitted light can indicate whether the needle tip is located inside or outside of a blood vessel.

According to one embodiment of the present invention, a digital micro-mirror device having improved contrast and a method for the same are provided. The digital micro-mirror device includes a plurality of current-carrying conductors on an upper surface of a substrate, each current-carrying conductor having an upper surface; a low-reflectivity metal disposed upon the upper surfaces of the current-carrying conductors; first and second micro-mirrors forming an aperture above the substrate; and wherein the low-reflectivity metal disposed upon on the upper surfaces of the current-carrying conductors reduces reflection of light received through the aperture by the current-carrying conductors.

A method and laser system effect rapid removal of material from a workpiece by applying heating energy in the form of a light beam to a target location on the workpiece to elevate its temperature while maintaining its dimensional stability. When the target portion of the workpiece is heated, a laser beam is directed for incidence on the heated target location. The laser beam preferably has a processing laser output that is appropriate to effect removal of the target material from the workpiece. The combined incidence of the processing laser output and the heating energy on the target location enables the processing laser output to remove a portion of the target material at a material removal rate that is higher than the material removal rate achievable when the target material is not heated.

A thermal sensor for low level radiation with built-in photo-thermal gain utilizing a thin film of pyro-optical material to modulate the reflectivity and / or transmission of a photonic carrier beam. The photonic carrier beam is modulated by the temperature of the pyro-optical film and detected by typically a silicon detector. A slight temperature increase of the pyro-optical film due to absorption of low level radiation increases the coefficient of absorption of the photonic carrier beam which in turn causes a further increase in temperature of the pyro-optical film. The photonic carrier beam provides power to increase the temperature of the pyro-optical film beyond the heating caused by the absorption of low level radiation alone. This thermal amplification effect provides a radiation sensor with photo-thermal gain.

A biological information processing apparatus includes the following elements. A light source irradiates biological tissue with light. A transducer functions as an ultrasonic wave transmitting unit that applies an ultrasonic wave to a local region in the biological tissue. A photodetector detects modulated light obtained by modulating the light from the light source with the ultrasonic wave in the local region. The transducer also functions as an acoustic wave detecting unit that detects an acoustic wave emitted from the local region at a time when the local region absorbs the light from the light source. An absorption characteristic in the local region is calculated using an acoustic signal, serving as an output of the acoustic wave detecting unit, on the basis of a light intensity in the local region calculated based on a modulation signal, serving as an output of the photodetector.

Provided are a photosensitive resin composition which is excellent in a moisture and heat resistance and provides a cured product thereof with a high elastic modulus at high temperature and which is excellent as well in a hollow structure holding property and a photosensitive film prepared by using the same, a forming method for a rib pattern, a hollow structure and a forming method for the same and an electronic component. In an electronic component having a hollow structure, a photosensitive resin composition is used as a rib material or a cover material for forming the hollow structure described above, and it is characterized by using a photosensitive resin composition containing (A) a photopolymerizable compound having at least one ethylenically unsaturated group and (B) a photopolymerization initiator and a photosensitive film obtained from the above photosensitive resin composition. Used as the component (A) are acrylate compounds or methacrylate compounds, to be specific, an acrylate compound or a methacrylate compound having an amide group and an acrylate compound or a methacrylate compound containing a urethane bond.

In a method for the production of x-ray-optical gratings composed of a first material forming of periodically arranged grating webs and grating openings, a second material is applied by electroplating to fill the grid openings. The electroplating is continued until a cohesive layer of the second material with uniform height is created over the grating webs with this layer having a large absorption coefficient, the absorption properties of the grating structure of the grating are homogenized, so an improvement of the measurement signals that are generated with this grating is improved. Moreover, the mechanical stability of gratings produced in such a manner is improved.

A method for producing a master disk 105 for an optical disk 110 includes a layer forming step of forming a heat-sensitive material layer 102 on a substrate 101, an exposure step of exposing the heat-sensitive material layer 102 partially to a laser beam, and a pit and land pattern forming step of forming a pattern of pits and lands by means of the difference between the etching rates of the exposed portion and the unexposed portion of the heat-sensitive material layer 102. The heat-sensitive material layer 102 includes at least Sb and O. When the composition ratio of O is defined as x (atom %), x is 3 or more and 50 or less.

A head model according to one example of an embodiment is a head model that may be provided for use in the calibration for a brain-imaging device, where a part corresponding to the skull and a part corresponding to at least one specific region of the brain are each formed by a continuous cavity with no cuts other than an opening for liquid injection.

An n-side electrode, an n-substrate, an n-buffer layer, a GRIN-SCH-MQW active layer, a p-spacer, a p-cladding layer, a p-contact layer, and a p-side electrode are laminated one on top another in that order. Above the n-buffer layer, the GRIN-SCH-MQW layer and the p-spacer layer occupy a narrower area than the n-substrate in a direction that is at right angles to the laser emission direction, wherein the remaining area is occupied by a p-blocking layer and an n-blocking layer. Within the p-spacer layer are embedded a first diffraction grating and a second diffraction grating. Between the first and the second diffraction grating and the p-side electrode is provided a current non-injection area.

A polyamide resin obtained by heating and condensation-polymerizing ingredients mainly comprising pentamethylenediamine having a total content of 2,3,4,5-tetrahydropyridine and piperidine of 0.10 wt. % or lower and an aliphatic dicarboxylic acid having 7 or more carbon atoms, a 0.01 g / mL solution of the polyamide resin in 98% sulfuric acid having a relative viscosity at 25° C. of 1.8-4.5. The polyamide resin has excellent heat resistance, extremely low water absorption, and excellent melt residence stability and is hence suitable for use as long molded articles represented by automotive radiator tanks, etc.

In a method for the production of x-ray-optical gratings composed of a first material forming of periodically arranged grating webs and grating openings, a second material is applied by electroplating to fill the grid openings. The electroplating is continued until a cohesive layer of the second material with uniform height is created over the grating webs with this layer having a large absorption coefficient, the absorption properties of the grating structure of the grating are homogenized, so an improvement of the measurement signals that are generated with this grating is improved. Moreover, the mechanical stability of gratings produced in such a manner is improved.

This invention concerns a method for absorbing acrylic acid, characterized by supplying an acrylic acid-containing reaction gas component obtained by the reaction of catalytic gas phase oxidation to an acrylic acid absorption column and advancing a high boiling inert hydrophobic organic liquid into counter-flow contact with said reaction gas in said acrylic acid absorption column with the mass flow rate of the organic liquid fixed in the range of 0.2-7.0 times the mass flow rate of the acrylic acid in the reaction gas thereby absorbing acrylic acid in said organic liquid and obtaining an acrylic acid-containing solution including a low boiling substance in the range of 0.7-7.5 wt % based on the weight of bottom liquid of absorption column.

A device for reading an image (an image reading device) according to this invention comprises therein at least one photoelectric conversion semiconductor device provided on a substrate and at least one thin film transistor circuit element provided on the substrate wherein said photoelectric conversion semiconductor device and said thin film transistor circuit element comprise semiconductor regions obtained from one semiconductor film provided on said substrate. The device for reading an image is produced by a process comprising the steps of: depositing a semiconductor material on a substrate; forming a photoelectric conversion semiconductor device on said substrate, a semiconductor region of said photoelectric conversion semiconductor device being made of said semiconductor material; and forming a thin film transistor on said substrate, a semiconductor region of said thin film transistor being made of said semiconductor material, wherein said thin film transistor constitutes an electric circuit required to read an image.

A VCSEL with nearly planar intracavity contact. A bottom DBR mirror is formed on a substrate. A first conduction layer region is formed on the bottom DBR mirror. An active layer, including quantum wells, is on the first conduction layer region. A trench is formed into the active layer region. The trench is formed in a wagon wheel configuration with spokes providing mechanical support for the active layer region. The trench is etched approximately to the first conduction layer region. Proton implants are provided in the wagon wheel and configured to render the spokes of the wagon wheel insulating. A nearly planar electrical contact is formed as an intracavity contact for connecting the bottom of the active region to a power supply. The nearly planar electrical contact is formed in and about the trench.

The invention provides a photochromic dye of a structure containing a common structure of spirooxazine series compounds and three substituents. The photochromic dye according to the invention exhibits characteristics of a high heat stability, good light fatigue resistance, high sensitivity, extremely degradation rate and the like. This photochromic dye can be formulated with suitable organic solvents and used as photochromic functional colorants under UV light excitation. Further, this photochromic dye can be synthesized and purified in simple steps with cheap raw materials and hence at a greatly lowered production cost.

To provide a novel glass composition having the property of browning substantially improved, while securing an adequate X-ray absorption property and while suppressing devitrification of a panel glass to a practically problem-free level, in preparation for higher voltage and larger current for projection type cathode ray tubes. A panel glass for cathode ray tube, having a glass composition containing substantially no PbO, and more than 10 mass % and at most 15 mass % of ZnO, wherein (MgO (mass %)+ZnO (mass %)) / (SrO (mass %)+BaO(mass %)+CaO (mass %))>0.55, and wherein when the sum of Na2O (mol %), K2O (mol %) and Li2O (mol %), as represented by mol percentage, is represented by R2O, 0.15≦Na2O (mol %) / R2O≦0.25, and 0.45≦K2O (mol %) / R2O≦0.55, and the linear absorption coefficient of X-ray having a wavelength of 0.06 nm is at least 36.0 cm−1.

A perforated hard trim construction for incorporation into a an automobile interior with sound absorbing properties is provided. In one variation, the perforated hard trim construction includes a non-perforated metal component and a perforated hard trim component having a plurality of openings and connected to the non-perforated metal component. The plurality of openings have a sufficient total area such that the random incidence absorption coefficient is greater than about 0.1 for one-third octave center frequencies from about 1000 to about 10000 Hz. In an important variation, an porous sound absorbing material is interposed between the non-perforated hard trim component and the perforated hard trim component.

An x-ray window, which may be utilized within an x-ray source or an x-ray detector is disclosed, and a method for manufacturing the same. The x-ray window may be permeable to soft x-rays. The x-ray window may have at least one surface in contact with a pressure essentially equal that of a vacuum. The x-ray window may be multilayered with a thickness of less than or equal to one micron.

A solar battery 10 comprises a metal electrode layer 12, a pin junction 100, and a transparent electrode layer 16 which are successively laminated on a substrate 11 such as a silicon substrate. The pin junction 100 comprises an n-layer 13, an i-layer 14, and a p-layer 15 which are laminated in succession. The i-layer 14 is formed by amorphous iron silicide (FexSiy:H) containing hydrogen atoms. In the i-layer 14, at least a part of the hydrogen atoms contained therein terminate dangling bonds of silicon atoms and / or iron atoms, so that a number of trap levels which may occur in an amorphous iron silicide film can be eliminated, whereby the i-layer 14 exhibits a characteristic as an intrinsic semiconductor layer.

A photovoltaic (solar) cell comprises two photovoltaic devices that are quantum mechanically coupled via a charge-coupling layer. One of the PV devices may have an energy band gap that is larger than or equal to an energy band gap of the other of the PV devices. The effective electron barrier heights or electron affinity on side portions of the quantum coupling layer are higher than the maximum energy of photo-generated electrons in the photovoltaic devices. The photovoltaic device with larger band gap may include an electron and / or hole transport layer and photon absorbing layer. Photons are transmitted through the transport layer to the absorbing layer. Some high energy photons are absorbed by the absorbing layer. The absorbing layer may function as an absorber of high energy photons and generator of electrons / holes (or excitons). Holes generated in the absorbing layer may be quenched by electrons from the second photovoltaic device.

A photosensitizer dye is provided. The photosensitizer dye is a Ru complex as formula (1):

A curable composition which comprises a carbonate-based polymerizable monomer represented by the following formula, other polymerizable monomers and a photochromic compound, can be used even under high-temperature and high-humidity conditions without any problems and provides a cured product having excellent photochromic properties.wherein A and A′ are each a linear or branched alkylene group having 2 to 15 carbon atoms, “a” is an average value of 1 to 20, when there are a plurality of A's, A's may be the same or different, R1 is a hydrogen atom or methyl group, and R2 is a (meth)acryloyloxy group or hydroxyl group.

A GaN crystal substrate is provided, which has a diameter of not less than 20 mm and a thickness of not less than 70 μm and not more than 450 μm, and has a light absorption coefficient of not less than 7 cm−1 and not more than 68 cm−1 for light in the wavelength range of not less than 375 nm and not more than 500 nm. A fabricating method of the GaN crystal substrate, and a light-emitting device fabricated using the GaN crystal substrate are also provided.