The invention provides an epitaxial
wafer of a
green light emitting
diode and a preparation method thereof, the epitaxial
wafer of the
green light emitting
diode comprises a multi-
quantum well layer and further comprises a multi-
quantum well preparation layer, the multi-
quantum well layer grows on the multi-
quantum well preparation layer, the multi-
quantum well preparation layer comprises an AlGaN layer, an InAlGaN layer, an InGaN layer and an InN layer which sequentially grow in an epitaxial mode, and the AlGaN layer, the InAlGaN layer, the InGaN layer and the InN layer are arranged on the multi-
quantum well preparation layer. The multi-quantum well layer is grown on the InN layer. According to the invention, the multi-quantum well preparation layer with a special structural design is grown before the multi-quantum well, so that the defects in the quantum well are successfully reduced, the bottom layer is more matched with the
crystal lattice of the quantum well, the stress of the
green light multi-quantum well layer is released, an In-rich environment is provided, the incorporation of the green light In component is increased, and the light emitting efficiency is improved. And the polarization effect in the quantum well is reduced, so that the In clustering phenomenon is reduced, the In component distribution is more uniform, the light-emitting area is more uniform, and finally, the light-emitting
wavelength uniformity is remarkably improved.