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245results about How to "Shorten filling time" patented technology

Oil charging accurate control method for wet clutch

The invention relates to an oil charging accurate control method for a clutch in the gear shifting process of a wet double-clutch automatic transmission. The oil charging process of the clutch is divided into four stages. In the first stage, oil is rapidly charged into the clutch, the oil charging pressure satisfies the equation that P1=P0+delta P1, P0 is the target pressure, and the most appropriate delta P1 value under each oil temperature and gear shifting type is found out through an experiment mode by considering the influences of the oil temperature of a gear box and the gear shifting type. In the second stage, oil charging compensation is carried out on the clutch subjected to rapid oil charging, the oil charging pressure satisfies the equation that P2=P0+delta P2, and the most appropriate delta P2 value under each gear shifting type and system pressure is found out through an experiment mode by considering the influences of the gear shifting type and system pressure. In the third stage, oil charging waiting is carried out on the clutch, the oil charging pressure satisfies the equation that P3=P0, and the third stage is ended when the pressure of the clutch reaches 95% of the target pressure. In the fourth stage, oil charging is finished. By controlling the pressure of each stage, rapid and accurate response of the pressure of the oil charging process of the clutch can be realized, and impact caused by pressure overshoot of the clutch is avoided.
Owner:CHINA FIRST AUTOMOBILE

Micro-pore electroplated copper filling method for three-dimensional (3D) copper interconnection high aspect ratio through-silicon-via technology

The invention discloses a micro-pore electroplated copper filling method for a three-dimensional (3D) copper interconnection high aspect ratio through-silicon-via technology. The micro-pore electroplated copper filling method comprises the following steps of: 1, preparing an electroplating solution of a copper methane sulfonate system; 2, wetting micro pores of the through-silicon-via technology through electroplating pretreatment; 3, electrifying and slotting, and increasing the ultralow current diffusion step, so that the copper ion and additives are reasonably distributed on the surfaces and inside the micro pores through the through-silicon-via technology; 4, connecting a silicon wafer where the through-silicon-via technology is positioned with a cathode of a power supply, so that the electroplating surface of the wafer is completely soaked in the electroplating solution, step-by-step current electroplating is performed under the condition that the cathode is rotated or stirred, and the electroplating conditions comprise the current density of 0.01-10A / dm<2> and the temperature of 15-30 DEG C; and 5, completely and thoroughly washing the wafer by using deionized water, performing spin-dry or blow-dry. The provided micro-pore electroplated copper filling method for the 3D copper interconnection high aspect ratio through-silicon-via technology is high in pore filling speed and thin in surface copper, hole and crack risks are avoided, and complete filling of high-difficulty hole with the depth-to-width ratio of more than 10:1 can be realized.
Owner:SHANGHAI SINYANG SEMICON MATERIALS

Fast directional multilevel simulation method for planar microstrip circuit

The invention discloses a fast directional multilevel algorithm for analyzing a planar microstrip circuit. The planar microstrip circuit structure is analyzed based on the fast directional multilevel algorithm. In the algorithm, a complex circuit is divided by a planar triangular surface element, and the fast directional multilevel algorithm is combined with a Rao-Wilton-Glisson (RWG) function to be applied to an electric field integral equation to ensure the calculating accuracy of a model; and by utilizing a principle that an impedance matrix formed by a moment method when the field-to-source point distance is long enough has good low-rank characteristic, fast directional multilevel calculation is adopted for a far field area, a Green function is unfolded by a low-rank expression, the expansion is only related to calculation of a kernel function so as to greatly reduce the calculating complexity of the multilayer microstrip circuit, and the calculating complicity and internal memory demand are reduced to O(NlogN) magnitude. A quadtree form is also adopted for grouping analysis of the planar microstrip multilayer circuit, the consumption of the internal memory is effectively reduced, the calculation result is accurate, the testing cost is low, and the fast directional multilevel algorithm can be widely applied to simulation analysis of complex circuits.
Owner:NANJING UNIV OF SCI & TECH

Low-pressure casting mould and method for casting hub

The invention provides a low-pressure casting mould and a method for casting a hub. The low-pressure casting mould comprises a lower mould body, multiple side mould bodies, an upper mould body and a control device. The multiple side mould bodies are matched with the lower mould body to form a rim cavity and a flow pass cavity corresponding to a rim of the hub to be cast. The upper mould body is matched with the lower mould body and the side mould bodies to form a spoke cavity corresponding to a spoke of the hub to be cast, an installing cavity corresponding to an installing plate of the hub to be cast, and an upper wheel edge cavity corresponding to an upper wheel lip of the hub to be cast. Two sprue cavities are formed in a bottom plate. The flow pass cavity, the upper wheel edge cavity, the spoke cavity, the rim cavity and the installing cavity are communicated mutually to form a cavity of the hub to be cast. The cavity of the hub to be cast is communicated with the two sprue cavities. According to the low-pressure casting mould, materials are fed from the two sprue cavities, casting to the top is carried out, mould filling time is shortened, stability is good, low-pressure casting is adopted for replacing forging to obtain a rotary extruded workblank, compared with forging equipment, precision is higher, manufacturing cost is lower, the mechanical performance of products is improved, and the production cost is reduced, which is beneficial for market competitiveness of the products.
Owner:ZHEJIANG JINFEI KAIDA WHEEL

Full-automatic coffee capsule filling machine suitable for coarse coffee powder

The invention discloses a full-automatic coffee capsule filling machine suitable for coarse coffee powder. The full-automatic coffee capsule filling machine comprises a main support and a transmission device, wherein the transmission device is arranged on the main support and is sequentially provided with a cup placing device, a feeding device, a film absorbing device and a film sealing device, the feeding device comprises a feeding support, the feeding support is provided with a raw material storage box, the bottom part of the raw material storage box is funnel-shaped and is connected with a material conveying device, the material conveying device comprises a three-way pipe, the three-way pipe comprises a material inlet pipe, a material storage through pipe and a material outlet pipe, the material inlet pipe is connected with the raw material storage box, the material storage pipe is internally provided with a worm rod, the other end, which is opposite to the material outlet pipe, of the worm rod is connected with a material conveying motor in an linkage mode, and a universal joint is connected between the material conveying motor and the worm rod. According to the full-automatic coffee capsule filling machine suitable for the coarse coffee powder, disclosed by the invention, the full-automatic coffee capsule filling machine is suitable for the filling of the coarse coffee powder, the filling efficiency is increased, the waste of human and material resources is reduced, and the whole filling process can be fully automated.
Owner:温州市沪华机械电器有限公司

Method for rapidly identifying hollow verification code

The invention belongs to the technical field of a verification code, and in particular relates to a method for rapidly identifying a hollow verification code. The method comprises the steps of firstly, thinning a character contour line of the verification code in a preprocessing stage; secondly, only filling a character block through inner and outer contour lines to obtain a solid character; thirdly, segmenting the solid character to obtain single characters and character components; fourthly, analyzing structural characteristics and order associations of the character components, and combining the character components by use of a minimum nearest neighbor algorithm to obtain the non-redundant single characters; and finally, identifying the single characters obtained after segmentation andcombination by use of a convolutional neural network to obtain a final deciphering result. According to the method for rapidly identifying the hollow verification code, compared with an existing identification method, not only is an original structure kept from being not damaged, but also breakages of the character contour lines are guaranteed to be accurately repaired, the filling time can be shortened, the filling precision can be improved, accurate acquisition and rapid identification of the hollow identification code are realized, the identification success rate is greatly improved, the applicability is high and better application values are provided.
Owner:PLA STRATEGIC SUPPORT FORCE INFORMATION ENG UNIV PLA SSF IEU

Method of submicron metallization using electrochemical deposition of recesses including a first deposition at a first current density and a second deposition at an increased current density

Methods for depositing a metal into a micro-recessed structure in the surface of a microelectronic workpiece are disclosed. The methods are suitable for use in connection with additive free as well as additive containing electroplating solutions. In accordance with one embodiment, the method includes making contact between the surface of the microelectronic workpiece and an electroplating solution in an electroplating cell that includes a cathode formed by the surface of the microelectronic workpiece and an anode disposed in electrical contact with the electroplating solution. Next, an initial film of the metal is deposited into the micro-recessed structure using at least a first electroplating waveform having a first current density. The first current density of the first electroplating waveform is provided to enhance the deposition of the metal at a bottom of the micro-recessed structure. After this initial plating, deposition of the metal is continued using at least a second electroplating waveform having a second current density. The second current density of the second electroplating waveform is provided to assist in reducing the time required to substantially complete filling of the micro-recessed structure.
Owner:SEMITOOL INC

Method of submicron metallization using electrochemical deposition of recesses including a first deposition at a first current density and a second deposition at an increased current density

Methods for depositing a metal into a micro-recessed structure in the surface of a microelectronic workpiece are disclosed. The methods are suitable for use in connection with additive free as well as additive containing electroplating solutions. In accordance with one embodiment, the method includes making contact between the surface of the microelectronic workpiece and an electroplating solution in an electroplating cell that includes a cathode formed by the surface of the microelectronic workpiece and an anode disposed in electrical contact with the electroplating solution. Next, an initial film of the metal is deposited into the micro-recessed structure using at least a first electroplating waveform having a first current density. The first current density of the first electroplating waveform is provided to enhance the deposition of the metal at a bottom of the micro-recessed structure. After this initial plating, deposition of the metal is continued using at least a second electroplating waveform having a second current density. The second current density of the second electroplating waveform is provided to assist in reducing the time required to substantially complete filling of the micro-recessed structure.
Owner:SEMITOOL INC
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