The invention discloses a preparation device and a preparation method of a
dielectric-active integrated super-stretching
transistor, and belongs to the technical field of
advanced manufacturing. The device comprises a high-
voltage power supply, two micro-injection pumps, a coaxial spray head and an X-axis and Y-axis movement module. The preparation method comprises the following steps: firstly, sequentially preparing the hydrophobic layer, the source-drain
electrode, the
dielectric layer, the grid
electrode and the substrate on the substrate, and then stripping and reversing to form a to-be-jet-printed sample; then, a coaxial electrofluid jet printing technology is utilized to enable a
polymer semiconductor functional layer material and a high-
viscosity packaging layer material to form coaxial
jet flow, and a winding wrapping structure is directly printed on the sample; and finally, standing and curing to enable the functional layer to be in contact with the source and drain electrodes to form a conductive path. The core of the invention lies in that the micro-nano patterning and in-situ packaging of the
semiconductor layer are realized at one time through coaxial jet printing, the packaging layer, the
dielectric layer and the substrate are made of the same material, a sandwich structure without interface stress is formed, the
tensile strain capacity (up to 200%), the air stability and the preparation success rate of the device are greatly improved, and the manufacturing cost is reduced. The technical bottlenecks of
transfer printing damage, patterning difficulty, interface problems, environmental sensitivity and the like in the traditional process are solved.