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A burr-free photolithography method

The invention relates to the technical field of semiconductor manufacturing and in particular relates to a burr-free photoetching method. The burr-free photoetching method comprises the following steps: S1, after pre-treating a wafer, coating the wafer with one layer of negative photoresist; carrying out selective exposure on the negative photoresist through a photoetching mask, wherein the exposure dosage of a photoetching machine is 100mj to 150mj and the focal distance deviation value is less than 1mu m; S2, carrying out first time of rotary covering and immersing type development on the exposed wafer, wherein the development time is 40s to 60s; S3, carrying out second time of rotary covering and immersing type development on the wafer after step S2, wherein the development time is 40sto 60s. According to properties of the negative photoresist, the negative photoresist can form a pattern better through limiting the exposure dosage, a exposure focal distance and time of 2 to 3 timesof the rotary covering and immersing type development, the pattern is wide in top and narrow in bottom and a lower layer of the pattern is concave inward; metal is not continuously distributed on thewhole photoresist in an evaporation process, so that a condition that the lower layer of the photoresist is stuck with the metal is avoided and a degummed metal layer is smooth and has no burrs; theelectrical property of appliances is improved and the yield of the appliances is improved.
Owner:CHENGDU HIWAFER SEMICON CO LTD
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