The invention provides a TSV (through silicon via) high-frequency three-dimensional integrated interconnection structure based on SOI (silicon on insulator). An internal cylindrical TSV through hole is coaxial with an external annular TSV through hole, in addition, benzocyclobutene resin insulation glue is filled between the internal cylindrical TSV through hole and the external annular TSV through hole, the external annular STV through hole sequentially comprises a silicon dioxide insulation layer, a blocking layer TaN, a copper seed layer and a hollow copper post from outside to inside, the internal cylindrical TSV through hole also sequentially comprises a silicon dioxide insulation layer, a blocking layer TaN, a copper seed layer and a cylindrical copper post from outside to inside, the silicon dioxide insulation layers, the blocking layers TaN, the seed layers, the hollow copper post and the copper post all penetrate through top layer silicon, a silicon dioxide buried oxide layer and bottom layer silicon of an SOI substrate in the longitudinal direction. The TSV high-frequency three-dimensional integrated interconnection structure has the advantages that the area of a chip is greatly reduced, in addition, signals are mutually insulated and isolated, the electricity leakage consumption and the noise coupling crosstalk are reduced, the signal transmission quality is improved, the reliability of three-dimensional integrated devices is enhanced, and the application requirements of radiation-proof reinforcement of high-frequency three-dimensional integrated devices can be met.