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60results about How to "High insulation resistivity" patented technology

High temperature stable X9R type multilayer ceramic capacitor dielectric material and preparation method thereof

ActiveCN103936414AOvercome the high temperature reduction effectReduce lossBarium titanateCeramic capacitor
The invention discloses a high temperature stable X9R type multilayer ceramic capacitor dielectric material and a preparation method of the high temperature stable X9R type multilayer ceramic capacitor dielectric material. The high temperature stable X9R type multilayer ceramic capacitor dielectric material disclosed by the invention is prepared by the steps of adding a calcium-boron-silicon compound to a barium titanate-sodium bismuth titanate-niobium pentoxide eutectic compound serving as a matrix, compounding one or more of Ce, Nd and La oxides, and compounding one or more of barium-manganese oxide, magnesium oxide and zinc oxide; and the invention provides the preparation method of the high temperature stable X9R type multilayer ceramic capacitor dielectric material. The X9R type multilayer ceramic capacitor dielectric material prepared by using the material and the method provided by the invention has high temperature resistance (above 200 DEG C), and good temperature stability, and enable components and parts such as multilayer ceramic capacitors, tuners and duplexers to be suitable for the application at a high temperature (above 200 DEG C), thus having extremely high industrialization prospect and industrial application value.
Owner:FUJIAN TORCH ELECTRON TECH CO LTD

High dielectric constant X8R type MLCC medium material and preparation method

ActiveCN102718477AImprove medium temperature stabilityHigh Curie temperatureFixed capacitor dielectricRare-earth elementOxygen vacancy
The invention relates to a high dielectric constant X8R type MLCC medium material and a preparation method, the high dielectric constant X8R type MLCC medium material takes 100 weight parts of barium titanate as a base material, and the medium material comprises the following components by weight: 1.6-2.5 parts of niobium cobalt compound, 0.722-1.805 parts of titanium bismuth sodium compound, 1.25-2.0 parts of zirconium calcium compound, 1-3 parts of glass powder, 0.369-1.2 parts of one or a plurality of oxides of Ce, Yb, Dy and Ho and 0.1-0.25 part of manganese carbonate. The key and core of the present invention are characterized in that a proper amount of manganese carbonate, rare earth elements and a zirconium calcium compound are added, the rare earth element can be taken as a donor or an acceptor in the barium titanate dielectric ceramic material for doping and modifying, the movement of the intrinsic oxygen vacancy and the oxygen vacancy brought by other B site donor doping can be inhibited, the insulation resistivity of a material system, the ageing resistance and the reduction resistance of a material system can be increased, and the method provided by the invention can be used for making silver-palladium electrodes and nickel electrodes MLCC.
Owner:FUJIAN TORCH ELECTRON TECH CO LTD

Chemical coating prepared base metal internal electrode multi-layer ceramic chip capacitor dielectric material

The invention discloses a chemical coating prepared dielectric material of base-metal electrode multilayer ceramic capacitor, belonging to the capacitor material preparing technology, which adopts the technical proposal that a plurality of barium titanate grains are coated by the doped elements through chemical coprecipitation; the main ingredient, barium titanate BaTiO3, accounts for 90mol% to 97mol% of the prescription; the amount of nanometer inhibitory coating composite oxide accounts for 3mol% to 10mol% of the total materials. The ceramic material is sintered at a reducing atmosphere controlled by a humidified gas mixture of nitrogen and hydrogen at a temperature between 950 to 1250 DEG C to get a X7R / X5R type MLCC material; wherein the dielectric constant of the material at room temperature is 2000 to 2700; the temperature coefficient of capacitance is less than or equal to positive and negative 15%; the dielectric loss at room temperature is less than or equal to 2%. The ceramic crystal grain under 200nm has low dielectric loss and good material uniformity; the multilayer ceramic capacitor produced with the ceramic crystal grain has the advantages of large capacity, ultrathin dielectric layer and the thickness less than 2um.
Owner:TSINGHUA UNIV

Giant dielectric constant strontium titanate dielectric ceramic and preparation method thereof

The invention belongs to the technical field of ceramic materials, and discloses a giant dielectric constant strontium titanate dielectric ceramic and a preparation method thereof. The chemical formula of the ceramic is Sr1-xEuxTiO3, wherein x is more than or equal to 0.01 and less than or equal to 0.015. The preparation method comprises the following steps: proportioning SrCO3, Eu2O3 and TiO2, mixing, and carrying out ball milling; drying the ball-milled raw materials, sieving, pre-sintering at 1000 DEG C for 3 hours, and mixing and ball-milling the pre-sintered powder; drying and sieving the ball-milled raw materials, adding a binder into the obtained powder, sieving, granulating, pressing into a green body, and discharging glue; and sintering the blank body after complete glue removal at 1400 DEG C in N2 atmosphere, and preserving heat for 6 hours to obtain the final sample. According to the invention, the Sr1-xEuxTiO3 dielectric ceramic is prepared through doping modification by adopting a traditional solid-phase method, the dielectric constant is improved, the lower dielectric loss is kept, and the dielectric property of the ceramic material is further improved, so that the actual application requirements are better met.
Owner:TIANJIN UNIV

Ferrite manganese-magnesium-zinc material for power-type inductors, and application thereof

The invention discloses a ferrite manganese-magnesium-zinc material for power-type inductors, and application thereof. The material is obtained by mixing and calcining iron oxide, magnesium oxide, zinThe invention discloses a ferrite manganese-magnesium-zinc material for power-type inductors, and application thereof. The material is obtained by mixing and calcining iron oxide, magnesium oxide, zinc oxide and manganese oxide, adding auxiliary materials, conventionally grinding, drying and granulating the mixture and then pressing the obtained material. The material has the advantages of low proc oxide and manganese oxide, adding auxiliary materials, conventionally grinding, drying and granulating the mixture and then pressing the obtained material. The material has the advantages of low production cost, high magnetic flux density (Bs up to 4,000 G), high Curie temperature (Tc up to 210 DEG C) and high insulation resistivity [up to 10<3>M omega (500 V)], and can be widely applied to theduction cost, high magnetic flux density (Bs up to 4,000 G), high Curie temperature (Tc up to 210 DEG C) and high insulation resistivity [up to 10<3>M omega (500 V)], and can be widely applied to thepreparation of power-inductor magnetic cores and other materials.preparation of power-inductor magnetic cores and other materials.
Owner:南通大东电子有限公司

Chemical coating prepared base metal internal electrode multi-layer ceramic chip capacitor dielectric material

The invention discloses a chemical coating prepared dielectric material of base-metal electrode multilayer ceramic capacitor, belonging to the capacitor material preparing technology, which adopts the technical proposal that a plurality of barium titanate grains are coated by the doped elements through chemical coprecipitation; the main ingredient, barium titanate BaTiO3, accounts for 90mol% to 97mol% of the prescription; the amount of nanometer inhibitory coating composite oxide accounts for 3mol% to 10mol% of the total materials. The ceramic material is sintered at a reducing atmosphere controlled by a humidified gas mixture of nitrogen and hydrogen at a temperature between 950 to 1250 DEG C to get a X7R / X5R type MLCC material; wherein the dielectric constant of the material at room temperature is 2000 to 2700; the temperature coefficient of capacitance is less than or equal to positive and negative 15%; the dielectric loss at room temperature is less than or equal to 2%. The ceramic crystal grain under 200nm has low dielectric loss and good material uniformity; the multilayer ceramic capacitor produced with the ceramic crystal grain has the advantages of large capacity, ultrathin dielectric layer and the thickness less than 2um.
Owner:TSINGHUA UNIV

Anti-reduction BaTiO3-based dielectric ceramic and preparation method thereof

ActiveCN110304916AExcellent anti-reduction performanceHigh insulation resistivityInsulation resistanceMuffle furnace
The invention relates to an anti-reduction BaTiO3-based dielectric ceramic and a preparation method thereof. The chemical formula of the dielectric ceramic is (1-x) BaTiO3-xBi (Zn1/2Y1/2) O2.75, wherein x= 0.05-0.25. The preparation method comprises the following steps: (1) taking BaTiO3, Bi2O3, ZnO and Y2O3 as raw materials, and proportioning the raw materials according to the stoichiometric ratio of metal atoms in the chemical formula; (2) uniformly ball-milling and mixing the raw materials, drying, and presintering the raw materials in a muffle furnace to obtain ceramic powder; (3) carryingout secondary ball milling on the ceramic powder obtained by presintering, drying, then granulating and pressing to obtain a ceramic green body; and (4) after adhesive discharge of the ceramic greenbody, introducing reducing gas into a tube furnace for sintering to obtain the anti-reduction BaTiO3-based dielectric ceramic. The dielectric ceramic is sintered in a reducing atmosphere and has the characteristics of excellent insulating property and dielectric property, low production cost, stable dielectric property in a wide temperature range and the like, particularly when x = 0.15, the dielectric ceramic has the insulation resistivity which reaches up to 5.5* 1012 omega.cm, and the dielectric temperature stability meets the X8R standard.
Owner:WUHAN UNIV OF TECH
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