The invention discloses an HEMT integrated light-emitting
chip and a preparation method thereof, an epitaxial
wafer and a display backboard, the HEMT integrated light-emitting
chip comprises an N-type
semiconductor layer, an
intrinsic semiconductor layer, a first
quantum well layer and a second
quantum well layer which are stacked in sequence from bottom to top, the first
quantum well layer and the second
quantum well layer are different in light-emitting color, and the energy band widths of the first
quantum well layer and the second
quantum well layer are reduced in sequence; the second quantum well layer is arranged on the second light-emitting area on the first quantum well layer, barrier
layers and P-type
semiconductor layers which are stacked in sequence are arranged on the
first light-emitting area on the first quantum well layer and the second quantum well layer, and source electrodes are correspondingly arranged on the P-type
semiconductor layers; each
barrier layer is provided with a grid
electrode which is arranged at an interval with the P-type semiconductor layer; the N-type semiconductor layer is provided with a
common drain electrode which is connected with the N-type semiconductor layer and penetrates through the
electrode hole. The HEMT integrated light-emitting
chip manufactured through the method is more compact in structure, high in dimming capacity and higher in light-emitting efficiency, and single-color and double-color display is achieved.