37results about How to "Wider process window" patented technology

A trilayer resist (TLR) patterning scheme is provided to enable gate conductors, particularly polySi gate conductors, with critical dimensions (CDs) of less than 40 nm and minimal LER and LWR. In accordance with the present invention, the inventive patterning scheme utilizes an organic/inorganic/organic multilayer stack instead of an organic layer used in the prior art. The top organic layer of the inventive TLR is a photoresist material such as a 193 nm photoresist that is located atop an antireflective coating (ARC), which is also comprised of an organic material. The middle inorganic layer of the TLR comprises any oxide layer such as, for example, a low temperature (less than or equal to 250° C.) chemical vapor deposited (CVD) oxide, an oxide derived from TEOS (tetraethylorthosilicate), silicon oxide, a silane oxide, or a Si-containing ARC material. The bottom organic layer of the TLR comprises any organic layer such as, for example, a Near Frictionless Carbon (NFC), a diamond-like carbon, a thermosetting polyarylene ether.

In a capacitor, a memory device including the capacitor, and a method of manufacturing the capacitor, the capacitor includes a lower electrode comprising a single layer of one selected from the group including a noble metal alloy and an oxide thereof, a dielectric film formed on the lower electrode, and an upper electrode formed on the dielectric film.

Embodiments of the invention provide a method of forming nickel-silicide. The method may include depositing first and second metal layers over at least one of a gate, a source, and a drain region of a field-effect-transistor (FET) through a physical vapor deposition (PVD) process, wherein the first metal layer is deposited using a first nickel target material containing platinum (Pt), and the second metal layer is deposited on top of the first metal layer using a second nickel target material containing no or less platinum than that in the first nickel target material; and annealing the first and second metal layers covering the FET to form a platinum-containing nickel-silicide layer at a top surface of the gate, source, and drain regions.

A method of manufacturing contact hole is provided. First, a mask layer is formed on a substrate and a plurality of trenches is formed in the mask layer along two directions that cross over each other. The depth of the trenches is not greater than the thickness of the mask layer. However, there is an opening in the mask layer in the place where the trenches cross over each other. The opening exposes the substrate. Part of the substrate exposed by the opening is removed to form a contact hole in the substrate. In photolithography, it is easier to form lines than to form dots. Hence, the dimensions of contact holes are more precisely controlled.

The present invention relates to a method of making an aluminum alloy product having a gauge below 200 μm. It also relates to an aluminum alloy product having a gauge below the same value and to containers for food packaging application made from the aluminum alloy product. The invention is process of manufacturing an aluminum alloy comprising the following steps: continuous casting an aluminum alloy melt of the following composition, (in weight %): Fe 1.0-1.8, Si 0.3-0.8, Mn up to 0.25, other elements less than or equal to 0.05 each and less than or equal to 0.15 in total, balance aluminum, cold rolling the cast product without an interanneal step to a gauge below 200 μm and final annealing the cold rolled product.

A device having a raised segment, and a manufacturing method for same. An SOI wafer is provided having a substrate, an insulating layer disposed over the substrate, and a layer of semiconductor material disposed over the insulating layer. The semiconductor material is patterned to form a mesa structure. The wafer is annealed to form a raised segment on the mesa structure.

A thin film photovoltaic cell includes a light absorption layer of Group I-III-VI₂ semiconductor materials and a high surface energy thin film layer that improves adhesion between the light absorption layer and an underlying electrode layer. The high surface energy thin film either replaces or is deposited on top of the back electrode to decrease the formation of voids at the back interface during absorber growth/deposition and thereby enabling a wider process window and improved cell efficiencies. It is emphasized that this abstract is provided to comply with the rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.

Methods for integration of atomic layer deposition (ALD) of barrier layers and chemical vapor deposition (CVD) of Ru liners for Cu filling of narrow recessed features for semiconductor devices are disclosed in several embodiments. According to one embodiment, the method includes providing a substrate containing a recessed feature, depositing a conformal barrier layer by ALD in the recessed feature, where the barrier layer contains TaN or TaAlN, depositing a conformal Ru liner by CVD on the barrier layer, and filling the recessed feature with Cu metal.

A terpolymer composition is described that contains a statistical amount of 50-98 wt % of a first repeating AA-BB comonomer unit; 1-25 wt % of a second repeating AA-BB comonomer unit; and 1-25 wt % of a repeating lactam comonomer unit or 1-25 wt % of a third repeating AA-BB comonomer unit, where the terpolymer composition exhibits a high melting point similar to that of PA66 while also exhibiting a significantly reduced crystallization rate and crystallization temperature.

The present disclosure provides a crystalline polythiocarbonate and a preparation method thereof. The crystalline polythiocarbonate is a random copolymer and includes five structural units L1 to L5 as shown in the following formula. The method includes carrying out a polymerization reaction natively or in solution using carbon disulfide, ethylene oxide, selectively added third monomer, initiator, Lewis acid, selectively added chain transfer agent, and selectively added solvent as raw materials. This method provides a new way for high value-added application of carbon disulfide and ethylene oxide by using inexpensive carbon disulfide and ethylene oxide as monomers; the product is a random copolymerized crystalline polythiocarbonate with novel structure, which has various chain link structures and excellent mechanical properties, processing properties and degradability.