The embodiment of the invention provides a through hole forming method of a
package substrate, relates to the field of
semiconductor processes, and mainly solves the problems of low
etching speed, low hole forming efficiency or poor hole forming process in the existing through hole process of the
package substrate. The method comprises the following steps: defining a through hole position on a packaging substrate; forming a first
electrode at the position of the through hole in the first surface and forming a second
electrode at the position of the through hole in the second surface by adopting a
mask; pre-discharging the first
electrode and the second electrode to form an
electric breakdown area at the position of the through hole; removing the first electrode and the second electrode; reusing the
mask, forming a first
mask layer on the first surface, exposing the positions of the through holes by the first
mask layer, and forming a second
mask layer on the second surface, exposing the positions of the through holes by the second
mask layer; and through the first mask layer and the second mask layer,
etching to remove the
electric breakdown region at the position of the through hole so as to form the through hole. Porous batch
discharge is supported, and the
discharge machining efficiency is greatly improved.