The invention discloses a MoS2 phototransistor capable of improving photoelectric detection performance and a manufacturing method thereof, and relates to the technical field of photoelectric detection. Based on a novel 2D/0D hybrid interdigital phototransistor, high responsivity, a ultrafast response speed and self-powered photoelectric detection performance are realized. The phototransistor comprises a Si/SiO2 substrate, double-layer MoS2 thin films, a Pt electrode, InP@ZnS quantum dots and a silver film, and the plurality of double-layer MoS2 thin films are arranged on an upper surface of the Si/SiO2 substrate; a Pt electrode is manufactured on the upper surfaces of the double-layer MoS2 thin films and the Si/SiO2 substrate to serve as a drain-source electrode; the Pt electrode is an interdigital electrode, a thickness of the Pt electrode is 50nm, a width of the Pt electrode is 2 microns, a finger length of the Pt electrode is 300 microns, and a width distance between the two electrodes is 5 microns; the InP@ZnS quantum dots are manufactured on the surfaces of the Si/SiO2 substrate, the double-layer MoS2 thin films and the Pt electrode; and the silver film is manufactured on a back surface of the Si/SiO2 substrate to serve as a back gate electrode. Due to a design of a 2-micron interdigital Pt electrode, a plasma resonance effect can be achieved, and photoresponsivity is improved; and introduction of an asymmetric Pt/MoS2 Schottky barrier can effectively balance a dilemma of the photoresponsivity and a photoresponse speed.