The invention relates to a preparation method of a bipolar
transistor type
silicon-based
optical detector with an independent absorption region and a metasurface structure. The
detector comprises a top
silicon layer (secondary collector region), an n-type
silicon layer (collector region), a p-type
germanium-silicon layer (base region) and an n-type
polycrystalline silicon layer (emitter region) which are arranged on an
SOI substrate. And the absorption region is an n-type
polycrystalline silicon layer. The method comprises the following steps: epitaxially growing multiple
layers of materials on an SOI (
Silicon On Insulator) substrate, wherein the multiple
layers of materials comprise a Si layer / Si collector region, a SiGe layer / SiGe base region and a
polycrystalline silicon layer / polycrystalline Si emitter region;
etching the polycrystalline silicon layer and filling SiO2 to form an isolation region;
etching to form an emitter region mesa and a collector region mesa, depositing a
passivation insulating layer,
etching and preparing an
electrode contact hole,
sputtering and depositing, and manufacturing a
metal electrode; and manufacturing a metasurface structure in the polycrystalline silicon layer of the absorption region. According to the device,
light detection absorption and
photocurrent amplification are separated, structural parameters of an absorption region and the
junction area of the bipolar
transistor are optimized respectively, high-speed response is achieved, the light
absorption efficiency is high, and the absorption detection
wavelength is expanded to 1300-1550 nm.