The invention relates to the technical field of
semiconductor manufacturing, in particular to a
semiconductor chip scribing process, which comprises the following steps of: bonding and curing a
silicon wafer and a
ceramic wafer, and forming a bonding layer between the
silicon wafer and the
ceramic wafer;
cutting the surface of the
silicon wafer by using a scribing knife, and forming a wiring channel and a scribing channel on the surface of the silicon wafer;
cutting the two sides of the scribing channel by adopting a scribing knife, and forming a stress release groove penetrating through the silicon wafer and the bonding layer in the thickness direction of the silicon wafer;
cutting off the silicon wafer and the bonding layer at the scribing channel by using a first cutting knife; and cutting off the
ceramic wafer at the scribing channel by using a second cutting knife to form a plurality of
chip units. According to the invention, the interference of the
colloid and the deviation caused by the flowing and
volume change of the
colloid when the distance between the chips is low are avoided, the high-precision
processing is realized, and the production benefit is improved.