4 results about "Yttrium compound" patented technology

Provided is a thin-film forming raw material, which is used in an atomic layer deposition method, including an yttrium compound represented by the following general formula (1):where R1 represents a secondary alkyl group having 3 to 8 carbon atoms, R2 represents a tertiary alkyl group having 4 to 8 carbon atoms, and R3 represents a hydrogen atom, or a primary, secondary, or tertiary alkyl group having 1 to 5 carbon atoms.

The present invention provides a plasma-sprayed film comprising a composite of a magnesium compound and a yttrium compound, wherein the composite comprises monoclinic yttrium oxide.

The coating film of the present invention is formed on the surface of a vacuum chamber wall or internal component used for manufacturing semiconductors or display devices, wherein the coating film contains an yttrium compound, has resistance to plasma, and contains hydrogen in a predetermined ratio.

The invention discloses a high-thermal-conductivity diamond / copper-yttrium composite material and a preparation method thereof, and the preparation method comprises the following steps: mixing tungsten-plated diamond particles with copper-yttrium alloy powder, and then carrying out spark plasma sintering to obtain the composite material. According to the composite material, a copper yttrium compound / WC double-interface structure is formed, combination of diamond and a copper matrix is strengthened through a WC layer, and the interface combination condition of WC and the copper matrix is improved through a copper yttrium compound. By means of diamond surface tungsten plating modification and copper-yttrium matrix alloying, good bonding of a diamond / copper composite material interface is achieved, and the heat conductivity of the composite material can reach 600 W / (m * K) or above.