The invention discloses a preparation method of an MX2 / CrCl3
heterojunction, which comprises the following steps of: cleaning a SiO2 /
Si substrate to obtain a clean surface, adhering a block sample by using a 3M
adhesive tape, obtaining a dense and uniformly distributed thick-layer material on the
adhesive tape in a manner of repeatedly adhering and tearing two
adhesive tapes, and then stripping a two-dimensional material from the surface of the thick-layer material on the adhesive tape by using PDMS (
Polydimethylsiloxane) to obtain the MX2 / CrCl3
heterojunction. Single-layer MX2 and few-layer CrCl3 are identified by means of an
optical microscope or a
photoluminescence spectrum; the method comprises the following steps: sequentially stacking a few
layers of CrCl3 and a single layer of MX2 on a cleaned SiO2 /
Si substrate by virtue of a two-dimensional transfer platform so as to construct an MX2 / CrCl3 two-dimensional Van der Waals heterostructure; performing
vacuum annealing treatment on the prepared MX2 / CrCl3 sample to enhance the interface
coupling of the MX2 / CrCl3 sample so as to obtain an MX2 / CrCl3 two-dimensional Van der Waals
heterojunction sample with relatively high quality; and the circularly polarized
laser excites the MX2 / CrCl3 heterojunction to induce out-field-free
room temperature valley polarization of MX2, and finally, non-resonant excited
room temperature valley polarization under the action of no
external field is realized.