The invention provides a method for growing
sapphire crystal by a kyropoulos method. The method comprises the following stages: charging of materials, heating for melting the materials,
crystal drawing, shoulder-expanding growth, equal-
diameter growth, closing growth, lifting separation and cooling. In the process of shoulder-expanding growth, the shoulder-expanding
growth speed is not more than 5%-10% of the weight of the
crystal, the lifting speed is 0.1-1mm / h, when the weight of the crystal is 500g-1000g,
seed crystal rods are lifted up instantaneously by 2mm, and when the weight of the crystal is 1200g-1800g, the
seed crystal rods are lifted instantaneously by 2mm; in the closing growth stage, after the weight of the crystal is 70%-80% of the
target weight, a weight curve of the crystal becomes a wavy line, and the crystal grows for H hours continuously, and then enters the stage of lifting separation. The method provided by the invention has the beneficial effects that by adoptionof the shoulder-expanding growth process with instantaneous lifting and the closing growth process without bottom lifting, the formation and the enlargement of shoulder-part conical bubbles and bottom-part steamed-bun-shaped bubbles of the crystal are effectively relieved, the applicability to growth of large-size
sapphire is achieved, and the growth quality of the
sapphire crystal is improved; in addition, the shoulder-expanding process with instantaneous lifting is conductive to round growth of the crystal, cuts off a crystal boundary on the surface of the crystal, and is beneficial to improving the quality of the crystal.