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Heterogeneous integration-based self-adaptive sensing, storage and calculation integrated chip and preparation method thereof

PendingCN121969020Aeliminate separationEliminate data migrationIndiumVisual perception
The invention relates to the technical field of MOS semiconductors, and discloses a heterogeneous integration-based adaptive sensing, storage and calculation integrated chip and a preparation method thereof, the heterogeneous integration-based adaptive sensing, storage and calculation integrated chip comprises an IGCdO transistor and a TaOx memristor, the IGCdO transistor comprises a substrate, a hafnium aluminum oxide layer, a grid electrode, a source metal layer, drain electrode metal, an indium gallium cadmium oxide layer and a color-changing film; the grid electrode is in direct contact with the substrate, and the grid electrode is located under the indium gallium cadmium oxide layer; and the color-changing film covers the surface of the indium gallium cadmium oxide layer. According to the invention, by integrating the color-changing film with light adaptive capability, the wide bandgap oxide semiconductor phototransistor and the threshold switch memristor in a single chip, on-chip closed-loop processing of illumination perception, signal conversion and pulse coding is realized; physical separation and data migration among the sensing unit, the storage unit and the computing unit in a traditional visual system are eliminated, so that real sensing, storage and computing integrated collaboration is achieved on the device level, and system power consumption and processing delay are greatly reduced.
Owner:广西华芯振邦半导体有限公司