The invention relates to a preparation method of an N-type PERT dual-side battery. The preparation method comprises the following steps of S1, texturing; S2, front-surface
boron doping and junction fabrication; S3, back-
surface etching to remove an edge and a back-surface PN junction; S4, back-surface
phosphor doping and junction fabrication; S5, back-surface PSG and front-surface BSG removal; S6,alkali /
acid washing, in which a surface of a
silicon wafer is slightly etched by a mixed liquid of an alkali and
hydrogen peroxide, residual
impurity is removed, an HF acid solution is used for
pickling to neutralize the alkali liquid, and a
silicon oxide layer on the surface is removed; S7, wet
oxygen passivation; S8, aluminum
oxide deposition on a front surface; S9, SiNx deposition on the frontsurface by PECVD; S10, SiNx deposition on a back surface by PEVCD; S11, silk-
screen printing and
sintering; and S12,
laser isolation. By the preparation method, extremely high
boron-rich layer dopedon a surface of a
boron expansion surface can be removed, the
sheet resistance uniformity is improved, meanwhile, the
passivation effect of the N-type battery is improved, and the open
voltage and theconversion efficiency of the battery are obviously improved.