The present invention relates to a process for preparation of an electrically doped semiconducting material comprising a [3]-radialene p-
dopant or for preparation of an electronic device containing a layer comprising a [3]-radialene p-
dopant, the process comprising the steps : (i) loading an
evaporation source with the [3]-radialene p-
dopant; and (ii) evaporating the [3]-radialene p-dopant at an elevated temperature and at a reduced pressure, wherein the [3]-radialene p-dopant is selected from compounds having a structure according to formula (I) wherein A1 and A2 are independently
aryl- or heteroaryl- substituted cyanomethylidene groups, the
aryl and / or heteroaryl is selected independently in A1 and A2 from 4-cyano-2,3,5,6-tetrafluorphenyl,2,3,5,6-tetrafluorpyridine-4-yl, 4-trifluormethyl-2,3,5,6-tetrafluorphenyl, 2,4-bis(trifluormethyl)-3,5,6-trifluorphenyl, 2,5-bis(trifluormethyl)-3,4,6-trifluorphenyl, 2,4,6-
tris(trifluormethyl)-1,3-
diazine-5-yl, 3,4-dicyano-2,5,6-trifluorphenyl, 2-cyano-3,5,6-trifluorpyridine-4-yl, 2-trifluormethyl-3,5,6-trifluorpyridine-4-yl, 2,5,6-trifluor-1,3-
diazine-4-yl and 3-trifluormethyl-4-cyano-2,5,6-trifluophenyl), and at least one
aryl or heteroaryl is 2,3,5,6-tetrafluorpirydine-4-yl, 2,4-bis(trifluormethyl)-3,5,6-trifluorphenyI, 2,5-bis(trifluormethyl)-3,4,6-trifluorphenyl, 2,4,6-
tris(trifluormethyl)-1,3-
diazine-5-yl, 3,4-dicyano-2,5,6-trifluorphenyl, 2-cyano-3,5,6-trifluorpyridine-4-yl, 2-trifluormethyl-3,5,6-trifluorphenyl, provided that the heteroaryl in both A1 and A2 cannot be 2,3,5,6-tetrafluorpyridine-4-yl at the same time, respective [3]-radialene compounds, and semiconducting materials and layer, and electronic devices comprising said compounds.