The invention provides a method for removing
phosphorus and
boron from metallurgical-grade
silicon, which relates to the purification of metallurgical-grade industrial
silicon. The provided method for removing the
phosphorus and the
boron from the metallurgical-grade
silicon has the advantages of less investment, lower production cost, less environmental
pollution and the like. The method comprises the following steps of: putting a bulk silicon material into a
smelting furnace;
smelting the bulk silicon material, and covering the bulk silicon material with a
slag former to obtain a silicon block mixture; vacuumizing the
smelting furnace until the pressure is between 800 and 1,200 Pa, and charging
argon until the pressure is between 8,000 to 12,000 Pa; heating the silicon block mixture to be melted, introducing
water vapor, pouring a melted mixture on a loading
graphite crucible below a smelting
crucible, and taking out the silicon material after being cooled; crushing and milling the silicon material after
slag forming to obtain silicon
powder; soaking the powdered silicon in
hydrochloric acid; soaking the silicon
powder after being soaked in the
hydrochloric acid in dilute
aqua regia; and soaking the silicon
powder after being soaked in the dilute
aqua regia in
hydrofluoric acid to obtain the metallurgical-grade silicon without the
phosphorus and the
boron.