The invention provides a method for removing 
phosphorus and 
boron from metallurgical-grade 
silicon, which relates to the purification of metallurgical-grade industrial 
silicon. The provided method for removing the 
phosphorus and the 
boron from the metallurgical-grade 
silicon has the advantages of less investment, lower production cost, less environmental 
pollution and the like. The method comprises the following steps of: putting a bulk silicon material into a 
smelting furnace; 
smelting the bulk silicon material, and covering the bulk silicon material with a 
slag former to obtain a silicon block mixture; vacuumizing the 
smelting furnace until the pressure is between 800 and 1,200 Pa, and charging 
argon until the pressure is between 8,000 to 12,000 Pa; heating the silicon block mixture to be melted, introducing 
water vapor, pouring a melted mixture on a loading 
graphite crucible below a smelting 
crucible, and taking out the silicon material after being cooled; crushing and milling the silicon material after 
slag forming to obtain silicon 
powder; soaking the powdered silicon in 
hydrochloric acid; soaking the silicon 
powder after being soaked in the 
hydrochloric acid in dilute 
aqua regia; and soaking the silicon 
powder after being soaked in the dilute 
aqua regia in 
hydrofluoric acid to obtain the metallurgical-grade silicon without the 
phosphorus and the 
boron.