The invention discloses a method for
processing a
microstructure of a
silicon and
metal composite material. The method comprises the following steps of: 1, performing
congruent melting and bonding on a
silicon wafer and a
metal electroforming seed layer on a
silicon substrate; 2, performing photoetching on an AZ short pimp
electroforming metal pattern; 3, performing deep
etching on a first layer of silicon structure; 4, filling a structure in
electroforming metal; 5, performing photoetching on an AZ short pimp silicon
structure pattern; 6, performing deep
etching on a second layer of silicon structure; and 7, removing
photoresist and separating the substrate to release the
micro structure of the silicon and metal
composite material. The method has the advantages that: the functional silicon
wafer is bonded on the silicon substrate with the metal seed layer,
etching is performed by using a reaction
ion coupled dry method deep etching technology, a metal structure is electroformed, and other silicon structures are etched; the
micro structure obtained by the method has high size accuracy, and the electroforming metal has a perfect structure; the silicon side wall which is subjected to deep etching has
scallop-type strips, so that the electroformed metal structure and the silicon structure are meshed with each other and are not easy to separate and drop; moreover, the deep etching and electroforming process is adopted, so the
repeatability is high.