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66results about How to "Boost electrical signal" patented technology

Cerebral palsy child rehabilitation training method based on Kinect sensor

InactiveCN104524742AAccurate detection of coordinated actions in real timeImprove coordinationDiagnostic recording/measuringSensorsCerebral paralysisMuscular force
The invention discloses a cerebral palsy child rehabilitation training method based on a Kinect sensor. The method comprises the following steps: S1, acquiring skeleton point data of a child; S2, carrying out limb movement training and judging the tilting angle and uplifting angle of skeleton points of the child, wherein after the child conducts a movement, the movement of the child is captured, and the tilting angle and uplifting angle of the joint points of the head, the upper limbs and the lower limbs are judged; S3, carrying out robust interactive processing on the movement of the child; S4, connecting a game engine and sending child skeleton data obtained after robust interactive processing in the step S3 to the game engine; S5, feeding back the movement of the child in a voice mode to remind the child of non-standard movements and encourage the child to conduct standard movements; S6, estimating the progress of rehabilitation training of the child. According to the method, the movement behavior characteristics of the child in training are acquired based on microsoft Kinect, so that the cardiovascular endurance, muscular endurance, muscular force, balance and flexibility of the child are comprehensively developed.
Owner:HOHAI UNIV CHANGZHOU

Preparation and application of dopamine sensors on basis of nickel oxide-carbon nano-tubes

The invention provides a method for preparing nickel oxide-carbon nano-tube composite materials and application thereof. The nickel oxide-carbon nano-tube composite materials are used for modifying electrodes. The prepared modified electrodes can be used for selectively detecting biological small-molecular substances such as dopamine and uric acid. The method and the application have the advantages that the modified electrodes are high in selectivity and repeatability and good in stability; the sizes of the composite materials prepared by the aid of processes for depositing atomic layers can be accurately controlled, and the method for synthesizing the nickel oxide-carbon nano-tube composite materials is simple and convenient and is free of pollution; nickel oxide nano-particles in the composite materials are uniformly distributed on the walls of carbon nano-tubes, the dopamine catalytic performance can be greatly enhanced under the synergistic effects of the carbon nano-tubes and nickel oxide, and the dopamine detection sensitivity can be improved; the method has broad application prospect in the aspect of dopamine quantitative detection; the method includes simple step and is convenient to implement and high in practicality.
Owner:QINGDAO UNIV

Complementary metal oxide semiconductor (CMOS) image sensor and manufacturing method thereof

The invention discloses a complementary metal oxide semiconductor (CMOS) image sensor, which comprises an optical receiving array, a metal interconnection structure, a color filter array and a micro-lens array, wherein the optical receiving array serves as a photoelectric conversion device; the metal interconnection structure is arranged on the optical receiving array and comprises metal interconnection lines and a medium layer which is filled between the metal interconnection lines; the color filter array is arranged on the optical receiving array; the micro-lens array is arranged on the metal interconnection structure; the optical receiving array, the color filter array and the micro-lens array respectively comprise a plurality of units; the units of the color filter array are positioned in the medium layer of the metal interconnection structure and separated by the metal interconnection lines of the metal interconnection structure; and the units of the color filter array, the units of the optical receiving array and the units of the micro-lens array are respectively opposite to one another. Moreover, the invention also provides a manufacturing method of the CMOS image sensor. By adoption of the technical scheme provided by the invention, the problem of crosstalk of the CMOS image sensor can be solved.
Owner:BRIGATES MICROELECTRONICS KUNSHAN

Heat flux sensor and preparation method thereof

The invention discloses a heat flux sensor. The heat flux sensor comprises electrodes and a measuring head, wherein the electrodes and the measuring head are integrally sintered, a thermopile is directly deposited on a measuring face of the measuring head, and the two ends of the thermopile are deposited on end faces of the electrodes respectively; the thermopile comprises multiple thermocouple units connected in series, and each thermocouple unit comprises a cold node and a hot node which are connected with each other; a thermal resistance layer is deposited on the measuring face; one part ofeach cold node and one part of each hot node are both arranged between the thermal resistance layer and the measuring face; and protective films are deposited on the thermopile and the thermal resistance layer respectively. The heat flux sensor has the advantages of being high in response speed, high in sensitivity, simple in structure and the like. The invention further discloses a preparation method. The preparation method comprises the steps that S01, the electrodes, ceramic and glass powder are sintered to prepare an integrated structure; S02, film coating is directly performed on the measuring face through an ion beam sputtering process to form the thermopile and the thermal resistance layer; and S03, the protective films are deposited. The preparation method has the advantages of being simple in process and the like.
Owner:48TH RES INST OF CHINA ELECTRONICS TECH GROUP CORP
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