The invention discloses a double-sided heat dissipation MOS structure and a packaging technology thereof, and the technology comprises the following steps: packaging a
chip: enabling the back surface of the
chip to face upwards, enabling the
chip to be inversely installed on a bonding film, completely packaging the chip, and
grinding a packaging surface until the back surface of the chip is exposed;
electroplating outer pins:
electroplating a plurality of bonding pads on the exposed back surface of the chip and the ground packaging surface, continuously
electroplating the outer pins on the surface of each bonding pad, continuously packaging the bonding pads and the outer pins,
grinding and exposing the bottom surfaces of the outer pins, and transmitting heat of the back surface of the chip from the bonding pads to the outer pins and then dissipating the heat; electroplating the front surface of the chip: stripping the
adhesive film, electroplating a
metal column A on the front surface of the chip, encapsulating and
grinding an encapsulating surface until the top surface of the
metal column A is exposed; according to the invention, MOS devices are formed on the back surface and the front surface of the chip through the processes of layer-by-layer encapsulation, grinding, electroplating and the like, so that a double-
surface heat dissipation packaging structure is formed, the heat dissipation effect is good, and the heat dissipation efficiency is high.