38 results about "Pore interconnectivity" patented technology

A preparation method of a nickel titanium foam alloy with a double pore structure relates to a preparation method of a nickel titanium foam alloy. The invention solves the problems that the existing nickel titanium foam alloy used for the replacement and repair of the bone tissue has low pore interconnectivity and uneven pore distribution. The method comprises the following steps: respectively weighting several parts of nickel powder, titanium powder, large-particle sodium chloride and small-particle sodium chloride, evenly spreading large-particle sodium chloride and the mixed powder of nickel powder, titanium powder and small-particle sodium chloride in a mould in a laminated mode successively, and then performing cold compressing and forming, cold isostatic pressing, hot pressing sintering and homogenizing treatment in turn. The porosity of the nickel titanium foam alloy is 59.17%-71.71%; and the elastic modulus of the alloy is effectively reduced, which is close to the modulus of the bone tissue. The pore distribution is uniform, and small pores are distributed around large pores to ensure that the large pores are connected to form interconnected pores. By adopting the nickel titanium foam alloy, the bone tissue is controlled to only grow in the large pores; and the nickel titanium foam alloy can be used as the material used for the replacement and repair of the bone tissue.

The invention discloses a preparation method of a thermal interface material based on a high-density graphene interconnection network structure. The preparation method mainly comprises the following steps: taking copper powder with micron-scale or nano-scale particle size as a growth substrate, sintering and curing the copper powder by virtue of high temperature to form a porous interconnected foamy copper structure, and growing graphene on the surface of the copper powder by virtue of a chemical vapor deposition method to obtain a graphene-coated composite structure; then, etching the foamy copper frame by virtue of etching liquid to obtain a spongy graphene interconnection network framework; and finally, carrying out glue pouring and mechanical cutting to obtain a graphene/polymer composite thermal interface material. According to the preparation method, the graphene network can be grown in one step simply through the copper powder, then the foamy copper structure formed by the copper powder is etched off to obtain the spongy graphene interconnection network framework with high compactness and high heat conductivity coefficient, and finally, the mechanical strength and the use robustness of the spongy graphene interconnection network framework are improved through composite processing with a polymer. The method has the advantages of low cost, low defects, high heat conductivity coefficient and the like.

The purpose of the present invention is to provide a polyolefin resin porous film that maintains pore interconnectivity, has superior air permeability, and that, due to having a high shrinkage stress, is resistant to wrinkling during conveyance processes in high-temperature environments, therefore having a superior coating suitability. The present invention is characterized in that, at 90°C, the 1% modulus in the flow direction is equal to or greater than 4.5MPa, and the air permeability is equal to or less than 800s/100ml.

The invention discloses a manufacturing method of a double-sided photoelectric substrate with interconnected high-density through holes. According to the method, the double-sided interconnected photoelectric ceramic substrate with the high-density micro-through holes is manufactured on the basis of the processes of manufacturing the micro-through holes in the ceramic substrate by a laser processing technology, filling the auxiliary through holes, flattening the surface, sputtering a film layer, manufacturing wiring lines and the like. The method is based on a fine processing technology of AlNceramic by laser. The manufacturing technology of the high-density micro-through-hole interconnection photoelectric device is studied, through the high-density micro-through-hole double-face interconnection technology, the double sides of the substrate are connected via the through holes, Au is filled in the through holes, and the problems that the back face of a photoelectric module device circuit needs to have corresponding functions and is connected with a front face graph and reliability is poor are solved. A metal film layer is prepared on the basis of a magnetron sputtering technology, the high-density micro-through-hole interconnection photoelectric device manufacturing technology is realized, a patterning process technology is carried out through a metallization layer, and a thickfilm hole filling process and a thin film patterning process are effectively combined.

Despite the significant advances in designing injectable bulk hydrogels, the inability to control the pore interconnectivity and decoupling it from the matrix stiffness has tremendously limited the applicability of stiff, flowable hydrogels for 3D cellular engineering. To address this problem, we developed a universal method to convert macromolecules and the like with orthogonal chemical and/or physical responsivity, e.g., thermosensitive macromolecules with chemically-crosslinkable moieties, into annealable building blocks, forming 3D microporous beaded scaffolds in a bottom-up approach. For example, gelatin methacryloyl (GelMA), a widely used biomaterial in tissue engineering, may be converted into physically-crosslinked microbeads using a facile microfluidic approach, followed by flow of the microbead slurry and chemical crosslinking in situ to fabricate microporous beaded GelMA (B-GelMA) scaffolds with interconnected pores, promoting cell functionality and rapid (within minutes) 3D seeding in stiff scaffolds, which are otherwise impossible in the bulk gel counterparts.

The invention discloses a metallization lamination layer, a manufacturing method thereof and electronic equipment comprising the metallization lamination layer. According to an embodiment, the metallization lamination layer may include at least one interconnect line layer and at least one via hole layer alternately disposed on a substrate. At least one pair of adjacent interconnection line layer and via hole layer in the metallization lamination layer comprises interconnection lines in the interconnection line layer and via holes in the via hole layer. The interconnect line layers are closer to the substrate than the via hole layer. The outer peripheral side wall of the via holes on at least a portion of the interconnect lines does not exceed the outer peripheral side wall of the at leasta portion of the interconnect lines.

An integrated circuit (IC) interconnect structure may include a metal layer with asymmetric metal line-dielectric structures supporting fully self-aligned vertical interconnect accesses (vias). The interconnect structure includes metal lines spaced at a metal line pitch and dielectric structures disposed between adjacent metal lines. The width of the metal lines is asymmetric to the width of dielectric structures, providing an asymmetric width relationship that allows a metal line to have a greater cross-sectional area for reducing electrical resistance without having to increase metal line pitch. The via pattern is self-aligned to an upper metal opening at the top and an underlayer metal recess opening at the bottom, allowing the maximum contact area to reduce via resistance. To reduce capacitive coupling between adjacent metal lines, the adjacent interconnect structures include a plurality of gaps formed in a dielectric material of the dielectric structure.

The invention relates to a silicon through hole interconnection structure and a preparation method thereof. The preparation method comprises the steps of: providing a substrate, and forming a siliconhole in the substrate, and forming a stress release layer and a conductive structure in the silicon hole, the stress release layer being located between the conductive structure and the substrate. According to the preparation method of the silicon through hole interconnection structure, after a barrier layer is formed, the stress release layer grows on the surface of the barrier layer. After the conductive structure is formed in the silicon hole, the conductive structure expands due to the thermal effect in the subsequent thermal process, and the stress release layer can absorb the stress generated by the expansion of the conductive structure at the moment, thereby preventing the wafer from being broken due to too much internal stress of the wafer in the annealing process or the thinning process.

Disclosed is a bioresorbable implant with enhanced bone ingrowth and tissue integration utilizing an inside-out resorption mechanism and a method to manufacture a bioresorbable implants for use in osteotomies and bone-soft tissue reconstruction surgeries. The bioresorbable implant includes a polymer A (e.g., an aliphatic polymer matrix) and/or poly(propylene fumarate)), a carbohydrate B (e.g., a bioresorbable natural carbohydrate filler) and a ceramic C. The implant may be a porous scaffold structures with suitable porosity, pore size, pore interconnectivity, and mechanical properties for enhanced osteoblast penetration and bone formation to fabricate tissue integrating bioresorbable implants. The implant may be shaped as wedges, bone void fillers, and soft tissue fixation implant like screws, rods and/or anchors. In some embodiments, the implant may be a putty.

The present invention discloses a shape memory bone repairing stent for bone defect repair. The shape memory bone repairing stent comprises the following raw materials: HA, HDI, castor oil, PCL and water, wherein mass of the HA mass is 1%-7% of a total mass of the shape memory bone repairing stent raw materials, a sum mass of the HA, the HDI and the castor oil is 17-35% of the total mass of the raw materials, a mass ratio of the castor oil, the HA to the PCL is (4.46-6):(1.1-8.4):100; a mass ratio of the water to the HDI is 1:(18-19); and the shape memory bone repairing stent has a pore diameter of 534 [mu]m-797 [mu]m, a porosity is 50%-60%, and pore interconnectivity is 95%-99%. The shape memory bone repairing stent is prepared by using a pre-polymer foaming method, has pore structure andmechanical properties similar to bone tissues, at the same time has high shape memory property, biocompatibility and biodegradability, is not limited to mold shapes, manufacturing technology and bonedefect shapes, can be highly compatible with bone defect sites, and promotes formations of new bones and new blood vessels.

The invention provides a CSOP type ceramic shell, an amplification filter and a manufacturing method, and belongs to the technical field of ceramic packaging, the CSOP type ceramic shell comprises a ceramic substrate, a metal wall body, a metal chassis and a lead frame; the ceramic substrate is provided with interconnection holes, and metal tungsten columns are arranged in the interconnection holes; the metal wall body is arranged on the front surface of the ceramic substrate and forms a packaging cavity with the ceramic substrate; the metal chassis is arranged on the back surface of the ceramic substrate; the lead frame is connected to the back surface of the ceramic substrate and is connected with the metal tungsten columns; the ceramic substrate is made of aluminum oxide high-temperature co-fired ceramic. According to the CSOP type ceramic shell provided by the embodiment of the invention, the high-temperature co-fired ceramic is adopted to replace low-temperature co-fired ceramic, the high-temperature co-fired ceramic substrate and the lead frame are welded together during welding, and then the ceramic substrate, the metal chassis and the metal wall body are welded together by adopting the high-temperature welding flux, so that the processing cost and the processing difficulty are reduced; and the requirements of high-density wiring, batch, miniaturization, low cost, high reliability of an assembly process and the like can be met.

The invention belongs to the technical field of device preparation, and particularly relates to a preparation method of a silicon through hole interconnection structure. The method comprises the following steps of: bonding a plurality of devices to form a stacking piece, and bonding a bearing sheet at the bottom of the stacking piece; etching the stacking piece to form a plurality of silicon holes, and carrying out insulation processing on the side walls of the silicon holes; filling the silicon holes, and sintering a filler to form a compact material; and carrying out planarization, wiring and ball mounting in sequence, and finally removing the bearing sheet through de-bonding to form a silicon through hole interconnection structure. According to the method, all devices are stacked and formed through bonding, then the silicon through holes are formed, conduction of the silicon through hole interconnection structure can be achieved through filling, the phenomena of link offset and opencircuit are avoided, and the silicon through hole interconnection structure has good reliability. The method can reduce the preparation steps, can shorten the preparation time and can reduce the cost. According to the silicon through hole interconnection structure prepared by the method, the phenomena of deviation during through hole interconnection and relatively large contact impedance caused by connection do not exist.

A process of forming a tissue scaffold is described, the process comprising electrospinning polymer fibers from a spinneret onto a tissue scaffold template. In embodiments, the fibers are plasma-treated between the spinneret and the template. The scaffold may be constructed of alternating layers of aligned and randomly oriented fibers. The scaffold may be heat treated to control the mechanical properties of the scaffold, such as density, pore size and pore interconnectivity.

The invention discloses a preparation method of a deep hole interconnection structure based on nano-metal. The preparation method comprises the following steps: firstly, forming a deep hole in a glass plate on which the deep hole interconnection structure is to be formed; filling the deep hole with the nano metal paste through a dispensing device; after filling is completed, scrapping off residual nano metal particles overflowing from the surface of the glass plate; then carrying out variable-depth sintering forming on the filled nano metal; and finally, carrying out wet cleaning on the glass plate to remove residual nano metal particles, thereby completing the preparation of the deep hole interconnection structure on the glass plate. According to the invention, the deep hole is filled with the nano-metal, then the deep hole interconnected conductor structure is formed through sintering, a copper electroplating mode does not need to be adopted, and pollution to the environment is avoided.

The invention provides a method for reducing contact resistance of a through hole, which comprises the following steps of: providing a substrate, and forming a dielectric layer on the substrate; etching the dielectric layer to form a through hole in the dielectric layer; forming a first barrier layer on the inner wall of the through hole; carrying out reduction reaction on plasma reaction gas and oxide naturally formed on the surface of the first barrier layer so as to remove the oxide naturally formed on the surface of the first barrier layer; and forming a second barrier layer on the first barrier layer; according to the invention, the plasma reaction gas and the oxide naturally formed on the surface of the first barrier layer are subjected to the reduction reaction to remove the oxide naturally formed on the surface of the first barrier layer, so that the contact resistance of the through hole can be reduced, and the connection quality of a through hole interconnection layer is ensured.

The invention discloses a nano-metal via hole interconnection method based on thermal shrinkage, which comprises the following steps of: (1) enabling a substrate to be in a tensile stress state by adopting a tensioning device; (2) filling the nano metal particles into the through holes of the substrate until the whole through holes are filled with the nano metal particles; (3) heating and sintering the substrate under controllable gas; in the sintering process, the tensile stress is gradually reduced through a tensioning device, the base plate is gradually shrunk, and the nano metal particles in the through holes are extruded; and (4) grinding or polishing the surface of the filled substrate. According to the method, under the thermal shrinkage condition, the nano metal is extruded, so that the filled nano metal particles have high compactness, machining defects in hole filling are reduced, the structure of the nano metal is stable, and the electric conduction and heat conduction performance of the nano metal is improved; and the method is simple to operate, higher in efficiency and capable of reducing environmental pollution.