40results about How to "Reduce the number of trimming" patented technology

The invention discloses a novel ceramic corundum grinding tool of a low-temperature and high-strength ceramic bonding agent. The grinding tool consists of the following components in percentage by mass: 15 to 20 percent of ceramic bonding agent, 80 to 85 percent of novel ceramic corundum grinding material and 5 percent of bonding wetting agent, wherein the bonding agent consists of the following components in percentage by mass: 10 to 30 percent of clay, 10 to 30 percent of feldspar, 45 to 70 percent of borosilicate glass, 0 to 15 percent of kryocide, 0 to 5 percent of quartz and 0 to 5 percent of magnesium oxide. The novel ceramic corundum grinding tool can be sintered at the sintering temperature of 850 to 980 DEG C, and by the grinding tool, a grinding wheel can be safely used at the rotation speed of 80 to 100m/s. The single-travel feeding amount of the grinding tool can be over 0.3mm, the metal removing rate is over 3 times that of an ordinary corundum grinding wheel, the grinding interval time is 3 to 5 times that of the ordinary corundum grinding wheel, the service life is 5 to 10 times that of the ordinary corundum grinding tool, and the novel ceramic corundum grinding tool is superior to a super-hard grinding tool and the ordinary grinding tool in performance and price.

The invention discloses a process for producing a ceramic grinding table. The process comprises the following steps: (1) prefabricating a glass material; (2) finely grinding glass powder; (3) mixing; (4) producing green bodies; (5) drying; (6) sintering; (7) molding the grinding table; (8) bonding the grinding table to a basal body; and (9) grinding to form the finished product. In the process for producing the ceramic grinding table, a ceramic binding agent is utilized to replace a traditional bronze binding agent to produce a diamond grinding table, and compared with a diamond grinding table produced by utilizing the bronze binding agent, the ceramic binding agent per se has the characteristics of good brittleness and self-sharpening; in a grinding process, due to the good self-sharpening, diamond in the upper layer quickly falls off after being blunt so that the diamond in the lower layer is exposed to form a new sharp grinding blade, the grinding force can be maintained for a long time, and the grinding table has good sharpening in grinding.

The invention discloses a ceramic bonding agent, a preparation method thereof and an application in a CBN grinding wheel, wherein the ceramic bonding agent is prepared from the following components inparts by weight: 41.0 to 44.5 parts quartz, 4.0 to 5.5 parts of alumina, 19.0 to 21.0 parts of boric acid, 3.0 to 5.0 parts of zinc oxide, 6.0 to 8.0 parts of lithium carbonate, 2.5 to 3.5 parts of sodium carbonate, 15.0 to 17.5 parts of barium carbonate, 2.0 to 3.5 parts of strontium carbonate. The preparation method of the ceramic bonding agent comprises the following steps: material preparation step, mixing step, melting step, water quenching step, ball milling step, particle size detection step and drying step. The ceramic bonding agent wets and coats the CBN abrasive particles well, increases the holding force of the bonding agent to the abrasive particles, and improves the strength of the bonding agent.

The present invention discloses a grinding disc with an internal flow supply structure, and the grinding disc is installed on a drive shaft with a plurality of feed lines and comprises a multi-porous grinding layer and a base. The multi-porous grinding layer comprises a bonding surface and a grinding surface, which are opposite to each other. The base is joined to the bonding surface, and comprises a plurality of channels passing through the base, wherein the channels are arranged in a concentric or radial form and at least a portion of the channels extend to an edge of the bonding surface. Each channel is used for disposing the liquid supply line. Therefore, the grinding disc can adjust the amount of fluid outlet at different positions of the polishing surface of the multi-porous abrasive layer by controlling the supply of the fluid in each channel or the flow rate so as to adjust the amount of consumption in different positions, by effectively reducing the deformation of the grinding surface to reduce the number of dressings.

The present invention belongs to the field of making of metal cutting tool, and is especially process and apparatus of plastically deformed and ground twist drill. The process includes the following steps: 1. plastically deforming rod material to make semi-finished drill with grooves possessing grinding allowance; and 2. heat treatment, grinding excircle and grinding groove in a groove grinding machine. The plastically deformed and ground twist drill has high precision and high production efficiency.

The invention provides a double-side polishing method of a 12-inch silicon wafer. The method includes the steps of firstly, placing the silicon wafer in the carrier of a polishing machine, allowing he silicon wafer to move relative to an upper polishing pad and a lower polishing pad under the drive of a sun gear and an outer gear ring, and alternately changing the rotation direction of the carrier so as to polish the surface of the silicon wafer; using a brush plate to brush the upper polishing pad and the lower polishing pad after the silicon water is polished for every 1-3 hours, wherein purified water is sprayed to the polishing pads during the brushing; thirdly, using a diamond trimmer to trim the upper and lower polishing pads after the silicon water is polished for every 12-24 hours, wherein purified water is sprayed to the polishing pads during the trimming. The method has the advantages that the phenomenon that the abrasion loss at the center of the polishing pads is different from that at the edge of the polishing pads can be improved effectively, residual impurities on the surfaces of the polishing pads can be removed effectively by the brush plate, glazing speed of the polishing pads is slowed, heterogeneity in the silicon wafer and between silicon wafers can be lowered, the trimming times of the polishing pads are reduced, polishing stability is increased, and production cost is lowered.