This invention relates to a GaAs-based flip-
chip Mini LED and its fabrication method. The
chip comprises, from bottom to top, a transparent substrate, a bonding layer, a P-current spreading layer, and a P-
ohm layer. A mesa is disposed on the P-
ohm layer. The mesa, from bottom to top, comprises a P-
waveguide layer, a light-emitting layer, an N-
waveguide layer, an N-current spreading layer, an N-buffer layer, and an N-
ohm layer. A P-
electrode is disposed on the P-ohm layer below the mesa; an N-
electrode is disposed on the N-ohm layer above the mesa.
Electrode pads are disposed directly above both the P-
electrode and the N-electrode. By setting electrode pads, the
soldering required in packaging production is combined with the electrode structure, eliminating the need for
solder paste application on the substrate, thus achieving
chip-substrate
interconnection and facilitating modular production of the packaged chip. This effectively improves the problems of weak chip-substrate
bonding strength, high coefficient of
thermal expansion, cumbersome manufacturing, and high production costs in chip packaging.