Disclosed is a method for preparing a lithium battery electrode material FeSe2 thin film through magnetron sputtering. The method comprises the steps that a, preparation of sputtering is conducted, a silicon chip selected as a substrate and a FeSe target selected as a sputtering target are installed in a magnetron sputtering chamber, and the distance between the sputtering target and the substrate is adjusted to be 5-7 cm; b, sputtering deposition is conducted, a vacuum chamber is vacuumized until the air pressure is below 2*10-4 Pa, then argon gas is pumped in, the sputtering air pressure, the sputtering power and the temperature of the substrate are adjusted, and a thin film is deposited on the silicon chip after the sputtering is conducted for a certain time; and c, post-annealing treatment is conducted, the silicon chip where the thin film is deposited and a selenium granular ball are sealed in a vacuum quartz tube with the air pressure being smaller than 1*10-2 Pa, then the quartz tube is positioned in a tubular furnace, the post-annealing treatment is conducted under protection of the argon gas, and the FeSe2 thin film is obtained. The method is capable of preparing the FeSe2 thin film with a large area and good properties, simple in preparation process, low in energy consumption, low in cost, high in efficiency, good in repeatability, and suitable for industrialized production.