The invention discloses a novel
die bonding film. The film is characterized by comprising nano
metal powder,
antioxidant,
soldering flux, stabilizer and
active agent, wherein the content of the nano
metal powder is 40-95.0 wt.%, the content of the
antioxidant is 1-50 wt.%, the content of the
soldering flux is 1-50.0 wt.%, and the total amount of the
soldering flux, the stabilizer and the
active agent is smaller than or equal to 10.0 wt.%. The film is advantaged in that the nanometer
metal powder, the
antioxidant, the soldering flux and other materials are mixed and pressed to form a film, highheat dissipation can be achieved, thickness is uniform, flatness of a
die bonding layer is well controlled,
die bonding and
interconnection under the low-temperature condition are achieved on the premise that
electrical performance of a
semiconductor packaging
interconnection module is not affected, and use under the conditions of small spacing, high power, high temperature,
high pressure and thelike can be met. The
solid crystal film can be used in the fields of power electronic application, IGBT packaging, photoelectron packaging, MEMS packaging,
microelectronics, high-power LED packagingand the like.