80results about How to "Cause adverse effects" patented technology

The invention discloses a preparation method of a zero-valent nano-iron supported polyacrylonitrile membrane composite material. The preparation method comprises the steps that a polyacrylonitrile membrane composite material supported with a uniform nano-iron layer is prepared through the steps of hydrophilized membrane preparation, functional membrane modification, liquid-phase reduction method and the like. The method is simple in operation and low in cost, the iron supporting amount is remarkable increased, and dissoluble iron ion release and secondary pollution of the iron ions to the environment are greatly reduced. The prepared nanocomposite material has superior reactivity and dispersion stability, meanwhile is easy to recover and regenerate and good in recycling performance, is a novel environmentally friendly material and has very high remediation and degradation performance to simulated dye wastewater, heavy metal wastewater, antibiotics, nitrate and halogenated organic compounds, and industrial production can be achieved.

The invention discloses a liquid filling machine. The liquid filling machine comprises a liquid storage tank, a liquid storage pipe, a pneumatic solenoid valve, a liquid pressure regulation and control device and a plurality of filling heads. The liquid storage tank is connected with a compressed air source through an air delivery pipeline. The pneumatic solenoid valve is arranged on the air delivery pipeline. A liquid outlet of the liquid storage tank is connected with the liquid storage pipe through a liquid delivery pipeline. The liquid pressure regulation and control device is arranged onthe liquid delivery pipeline, provided with a pressure regulation controller and electrically connected with the pneumatic solenoid valve to regulate the filling liquid pressure and control pressure to keep consistent. The liquid filling machine inflates the air into the liquid storage tank through the compressed air source, conducts real-time monitoring through the pressure controller, controls the system liquid pressure through the pressure regulation and control device to remain the liquid pressure within the set range, keeps stable in the filling process all the time and ensures the accuracy and stability of the filling volume. The liquid filling machine is adjustable in filling speed and high in filling efficiency. As the whole system is a closed device, and the adverse influence on the environment during filling is obviously alleviated.

A display panel, a display device, and a terminal device, which can achieve a high image quality by decreasing deterioration of the image quality that may be caused due to combining a reflection plate including an uneven structure with an image distributing device, are provided. The display panel includes a lenticular lens for distributing light emitted from each of pixels towards different directions from each other along an arranging direction (a first direction) of a pixel for displaying an image for a first viewpoint and a pixel for displaying an image for a second viewpoint within a pixel unit, wherein a reflection plate including an uneven structure is formed in each of the pixels, and a layout pattern of the uneven structure on the reflection plate is different to the lenticular lens.

The invention aims at solving the problems that a phosphating film formed by an existing environment-friendly rust removal phosphating agent is loose and is not uniform, provides an environment-friendly rust removal phosphating agent and a preparing and using method thereof, and belongs to the technical field of dust removal and antisepsis. The environment-friendly rust removal phosphating agent comprises chemical components including, by mass percent, 35% to 55% of phosphoric acid, 3% to 10% of dihydric phosphate, 1% to 10% of nitrate, 0.2% to 2% of a compound corrosion inhibitor, 0.5% to 3% of a surface active agent and the balance water, wherein the total amount of the components is 100%. The phosphating agent is friendly to environment, the rust removal phosphating is thorough, the phosphating film has porosity and uniformity, the attaching force of a coating and a bottom material is enhanced, the corrosion resistance to the steel is improved, and the agent is suitable for being applied to steel surface dust removal phosphating.

The invention discloses a mechanical descaling system for a geothermal well, and the mechanical descaling system comprises a derrick, a first fixed pulley, a second fixed pulley, a movable pulley, a winding machine and a well stabbing hammer, wherein the derrick and the winding machine are mounted beside the geothermal well; the first fixed pulley is mounted on the derrick and is located above the movable pulley; the second fixed pulley is mounted on the geothermal well and is located above the geothermal well; one end of a steel wire rope is connected with the upper side of the well stabbing hammer; and the other end of the steel wire rope sequentially passes through the second fixed pulley, the first fixed pulley and the movable pulley and is connected with the power output end of the winding machine. The mechanical descaling system for the geothermal well not only can be used for effectively solving the problem that the scale in the geothermal well is serious, but also is not limited by conditions and scales of the geothermal well; and the size and weight of the well stabbing hammer can be flexibly configured and the application range is wide; and the mechanical descaling system has the advantages of no introduction of chemicals, no pollution to the environment, simple process, fewer equipment and low cost, and is convenient to popularize.

The invention discloses an NMOS tube which comprises a P well formed on a surface of a silicon substrate, a gate structure formed on a surface of the P well, grooves formed on two sides of the gate structure, and embedded epitaxial layers in the grooves. The embedded epitaxial layers comprise silicon seed layers, silicon phosphorous main body layers, silicon phosphorous buffer layers between the silicon phosphorous main body layers and the silicon seed layers, and silicon cap layers protruding to the tops of the grooves. The silicon phosphorous main body layers have phosphorus heavily-doped structures, the silicon phosphorous buffer layers have phosphorus lightly-doped structures and are used for reducing the number of phosphorus of the embedded epitaxial layers expanded to a peripheral side P well so as to reduce and prevent the influence of the expanded phosphorus on channels. The invention also discloses a manufacturing method of the NMOS tube. The short channel effect of a device can be improved, and therefore, the stability of the device is improved.

The invention discloses an NMOS transistor. A manufacturing method of the NMOS transistor comprises the following steps: a P well is formed on the surface of a silicon substrate; a gate structure is formed on the surface of the P well; grooves are formed in the two sides of the gate structure; embedded epitaxial layers are arranged in the grooves; the embedded epitaxial layers include a silicon seed layer, a silicon-phosphorus body layer, a dual barrier layer located between the silicon-phosphorus body layer and the silicon seed layer, and a silicon cap layer protruding to the tops of the grooves; the dual barrier layer is formed by superposing a first barrier layer and a second barrier layer which are different in material; the silicon-phosphorus body layer has a phosphorus-heavily-dopedstructure; and the dual barrier layer is used for reducing the number of phosphorus of the embedded epitaxial layers, externally extending into the P well on the circumferential side, so as to reduceand prevent the influence of the externally-expanded phosphorus on a channel. The invention further discloses the manufacturing method of the NMOS transistor. The short channel effect of a device canbe improved, so that the stability of the device can be improved.