The invention discloses a method for optimizing the performance of a
vanadium oxide thin film through a low valent
vanadium seed layer, and relates to the field of
electronic materials. The method adopts a magnetron
sputtering technology,
vanadium metal is used as a target, Al2O3 is used as a substrate,
sputtering is conducted in the aerobic environment in twice, the
oxygen concentration of the first time of
sputtering is lower than that of the second time of sputtering, the low valent vanadium seed layer and the
vanadium oxide thin film are sequentially obtained through the two times of sputtering correspondingly, and finally the
vanadium oxide thin film optimized with the low valent vanadium seed layer is obtained through annealing. The prepared
vanadium oxide thin film with the low valent vanadium seed layer has high
phase change amplitude and small return
wire width and is closer to the
room temperature phase change temperature, and thus the sensitivity, stability, reliability andapplication prospects of thermotropic switch modulation devices are improved; and in addition, the annealing temperature required by preparation of the
phase change vanadium
oxide thin film through the method can be remarkably lowered, the process compatibility with an MEMS is better, and the method is suitable for
batch production.