The invention discloses a surface treatment method for a bismuth telluride base thermoelectric material wafer. The surface treatment method includes the following steps that the wafer is put into oil removing liquid for oil removing, and cold water is used for thorough flushing; activating liquid is firstly used for conducting room-temperature activating; then an electrolyte the same as the oil removing liquid is used for treatment; finally, pre-nickel-plating activating liquid is used for treatment; nickel plating liquid is used for electroplating, the wafer is taken out after nickel plating, and cold water is used for thorough flushing; and tin bismuth plating liquid is used for electroplating, the wafer is taken out after tin bismuth plating is over, cleaning and drying are conducted, and surface treatment of a bismuth telluride base thermoelectric material is completed. By means of the surface treatment method, a multi-step activating treatment process is adopted for ensuring the activating effect of the surface of the wafer, and the plating combining strength is high.